Xiaomi Inc.

Sino Nitride Semiconductor Co.ltd

Yongjian Sun

Jun Wan

Feng Li

Chuan Wang

Chuangqi Li

Zhaopeng Cheng

Yi Ru

Xijie Shen

Xing Yan

Guoyi Zhang

Qingsong Dai

Xinrong Yang

Xin Liang

Kangxi Tan

Qiang Xu

Mingkun He

Xiangning Kang

Zhizhong Chen

Zhijian Yang

Yuzhen Tong

A control method for controlling audio playing includes obtaining a playing instruction corresponding to a multi-media file, detecting whether a current playing environment meets a preset condition, and controlling playing of audio data in the multi-media file if the current playing environment meets the preset condition. The current playing environment includes at least one of a current audio output channel, the multi-media file, and a current time.

Method, apparatus, and storage medium for controlling audio playing based on playing environment

A logo assembly, a control method, a controller and an electronic device are provided. The logo assembly comprises: a front case of a logo and a touchpad attached to a backside of the front case of the logo. The touchpad comprises a touch sensor configured to send a control signal to the controller when detecting a touch control operation to the front case of the logo, such that the controller performs a control operation to the electronic device after receiving the control signal. By attaching the touchpad to the backside of the front case of the logo, it solves the issue that a logo has a negative impact on the design of the position of buttons at the front panel of the electronic device, thus reducing the impact of the logo on the position of the buttons.

Logo assembly of an electronic device

Display screen or portion thereof with a graphical user interface

The present application discloses a composite substrate with a protective layer for preventing metal from diffusing, comprising: a thermally and electrically conductive layer () having a melting point of greater than 1000&#xb0; C., and a GaN mono-crystalline layer () located on the thermally and electrically conductive layer (). At least the side wall of the composite substrate is cladded with a protective layer () for preventing metal from diffusing. The composite substrate not only takes account of the homoepitaxy required for GaN epitaxy and improves the quality of the crystals, but also can be used directly to prepare LEDs with vertical structures and significantly reduce costs. The disclosed composite substrate effectively avoids the pollution of experimental instruments by the diffusion and volatilization of a metal material during the growth of MOCVD at high temperature.

Composite substrate with a protective layer for preventing metal from diffusing

A remote control system, including: a remote controller including one or more direction keys respectively corresponding to different directions and a confirm key; and a display device controlled by the remote controller; wherein: the remote controller is configured to transmit a direction control signal of a corresponding direction to the display device when one of the direction keys is pressed; and the display device is configured to, when the direction control signal is received by the display device in a first state of displaying sub-level content without displaying a card directory and corresponds to a predetermined direction, switch to a second state of displaying a card directory, the card directory including one selected card and at least one candidate card arranged in order, and at least one switch direction.

Remote control system, remote controller, display device and remote control method

An electronic device, including: one or more hardware interfaces each for connecting to a signal source to receive at least one type of application resources; a control chip electrically connected to the one or more hardware interfaces, the control chip being configured to classify and integrate one or more types of application resources received through the one or more hardware interfaces, and generate a display signal for a main interface including a number of areas arranged according to a predetermined layout, wherein each area is configured to display information regarding a same type of the classified and integrated application resources, and different areas are configured to display information regarding different types of the classified and integrated application resources; and a display screen electrically connected to the control chip to display the main interface according to the display signal.

Electronic device and method for displaying resources

A solid-state laser lift-off apparatus comprises: a solid-state laser (), a light beam shaping lens (), motors of oscillating mirrors (), oscillating mirrors (), a field lens (), a movable platform (), an industrial control computer and control software (). The light beam shaping lens () is behind the solid-state laser (), shaping the laser beam from the solid-state laser () into required shape. The motors of oscillating mirrors () are in front of the field lens (), controlling the movement of the oscillating mirrors () according to the instruction of the control software () to implement different light beam scanning paths. A lift-off method for applying the solid-state laser lift-off apparatus uses a small laser spot to perform scanning, and enables damage-free separation of GaN from a sapphire substrate.

Solid-state laser lift-off apparatus

A method for nondestructive laser lift-off of GaN from sapphire substrates is disclosed. A solid-state laser is used as the laser source. A small laser-spot having a perimeter length of 3 to 1000 micrometers and a distance of two farthest corners or a longest diameter of no more than 400 micrometers is used for laser scanning point-by-point and line-by-line. The energy at the center of the laser-spot is the strongest and is gradually reduced toward the periphery. A nondestructive laser lift-off with a small laser-spot is achieved. The scanning mode of the laser lift-off is improved. Device lift-off can be achieved without the need of aiming. As a result, the laser lift-off process is simplified, and the efficiency is improved while the rejection rate is reduced. The obstacles of the industrialization of the laser lift-off process are removed.

Method for nondestructive lift-off of GaN from sapphire substrate utilizing a solid-state laser

Growing community of inventors

Beijing, China

Yongjian Sun