Samsung Electronics Co., Ltd.

Postech Research and Business Development Foundation

Yonghwan Kim

Sangwuk Park

Wook Hwan Kim

Jinyoung Park

Kwangjoo Kim

Youngdeog Koh

Jungpyo Hong

Sungju Ryu

Choongkeon Kim

Jaejoon Kim

Geonyeop Lee

Yangdoo Kim

Seok Rhee

Dahyun Byeon

Minkyu Suh

Dokeun Lee

A matting agent-free matte metallic steel sheet for a home appliance, including a primer layer formed on the steel sheet, a basecoat layer formed on the primer layer, a print layer formed on the basecoat layer, and a clearcoat layer formed on the print layer, wherein the clearcoat layer includes an acrylic resin having a weight average molecular weight Mw range of 70,000 to 100,000.

Matting agent-free matte metallic steel sheet for home appliance and refrigerators including the same

A method of manufacturing an integrated circuit device includes forming a mold structure, which has a mold layer and a support layer sequentially stacked, on a substrate, forming a vertical hole through the mold structure in a vertical direction and a bowing space extending outward from the vertical hole in a horizontal direction in a first vertical level area, exposing the vertical hole and the bowing space to a preprocessing atmosphere to make the support layer have a first surface state and the mold layer have a second surface state different from the first surface state, forming a bowing complementary pattern filling the bowing space by a selective deposition process using the difference between the first surface state and the second surface state, and forming a lower electrode in the vertical hole and in contact with the mold layer, the support layer, and the bowing complementary pattern.

Method of manufacturing integrated circuit device

Methods of forming a semiconductor device may include: providing a substrate on which a layer is formed; forming a lower hard-mask layer, which includes silicon, on the layer; forming an upper hard-mask pattern, which includes oxide, on the lower hard-mask layer; forming a lower hard-mask pattern by etching the lower hard-mask layer using the upper hard-mask pattern as an etch mask and using an etching gas that includes a metal-chloride-based first gas and a nitride-based second gas; and forming a plurality of contact holes in the layer by etching the material layer using the lower hard-mask pattern as an etch mask.

Methods of forming semiconductor devices

An arithmetic circuit includes an input buffer latching each of a plurality of input signals, sequentially input, and sequentially outputting a plurality of first addition signals and a plurality of second addition signals based on the plurality of input signals; a first ripple carry adder (RCA) performing a first part of an accumulation operation on the first addition signals to generate a carry; a flip-flop; a second RCA performing a second part of the accumulation operation on the second addition signals and an output of the flop-flop; the first RCA latching the carry in the flip-flop after the accumulation operation is performed; and an output buffer latching an output signal of the first RCA and an output signal of the second RCA, and outputting a sum signal representing a sum of the plurality of input signals.

Arithmetic circuit, and neural processing unit and electronic apparatus including the same

Growing community of inventors

Suwon-si, South Korea

Yonghwan Kim