Samsung Electronics Co., Ltd.

Yonghun Kwon

Youngchan Kim

Younggu Jin

Taesub Jung

Moosup Lim

Sunyoung Kim

Hyungsuk Kim

Hyukjun Jang

Seungyong Shin

Seungjae Lee

Youngmin Lee

Kyehoon Lee

Chunsoon Park

Taeyeon Kim

Sungho Jun

Keunbum Lee

A method measures the distance between a time-of-flight (ToF) sensor and an object based on cross time shift. The ToF sensor includes at least one depth pixel and a light source to direct transmission light to an object. The depth pixel may have a multi-tap structure and may generate sampled data based on reception light and demodulation signals having different phases. The reception light corresponds to the transmission light reflected from the object. The method includes generating time shifts between the transmission light and demodulation signals, performing sampling operations to generate the sampled data corresponding to the time shifts, determining a cross time shift based on sampled data of a first reference tap substantially equaling sampled data of a second reference tap, and determining the distance between the ToF sensor and the object based on the cross time shift.

Time-of-flight sensor and method of measuring distance using the same

A display apparatus includes: a substrate; a plurality of driving regions arranged in a plurality of rows and a plurality of columns on the substrate, each of the plurality of driving regions comprising a plurality of light emitting devices; and a plurality of driving devices configured to drive the plurality of light emitting devices of the plurality of driving regions, wherein a first driving device of the plurality of driving devices is provided in a first driving region of the plurality of driving regions, and a second driving device of the plurality of driving devices is configured to drive the plurality of light emitting devices of the first driving region.

Display apparatus

An image sensor includes a substrate having a plurality of unit pixels, a photoelectric device portion and a storage device portion disposed in the substrate and constituting the plurality of unit pixels, a device isolation structure disposed in the substrate and partitioning the plurality of unit pixels, and an overflow gate providing an overflow path between the photoelectric device portion and the storage device portion according to a certain voltage, wherein the device isolation structure is partially opened at a boundary between the photoelectric device portion and the storage device portion.

Image sensor with a device isolation structure enclosing a plurality of pixels including an opening in plan view

A display device includes: a display panel; a light source module on a rear side of the display panel and configured to generate light supplied to the display panel, the light source module including a plurality of light sources configured to emit light and a printed circuit board (PCB) on which the plurality of light sources are provided; and a bottom chassis on a rear side of the light source module and on which the light source module is provided, wherein the PCB includes: an insulating layer, a first conductive layer on a lower surface of the insulating layer, and a second conductive layer on an upper surface of the insulating layer, and an area of the second conductive layer is smaller than an area of the first conductive layer, and the PCB is convexly bent in a direction toward the display panel.

Display device

A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.

Image sensor comprising entangled pixel

A diffusion lens includes a concave first lens surface, a convex second lens surface such that part of light incident on the first lens surface is output from the second lens surface, a side surface extending from a periphery of the second lens surface in a vertical direction of the diffusion lens such that part of the rest of the light incident on the first lens surface is output from the side surface, and a bottom surface extending from a periphery of the first lens surface in a horizontal direction of the diffusion lens to meet a periphery of the side surface. Rates of change of the first and second lens surfaces have the same sign. A pattern is formed on the side surface and the bottom surface to diffuse the light through the side surface and diffuse the light reflected by the bottom surface.

Diffusion lens and display device having same

An image sensor includes a polarizer array and a depth pixel array. The polarizer array may include first to fourth unit pixels, which are arranged in a first direction and a second direction crossing each other, and may include polarization gratings respectively provided in the first to fourth unit pixels. The polarization gratings of the first to fourth unit pixels may have polarization directions different from each other. The depth pixel array may include depth pixels corresponding to the first to fourth unit pixels, respectively. Each of the depth pixels may include a photoelectric conversion device and first and second readout circuits, which are connected in common to the photoelectric conversion device.

Growing community of inventors

Hwaseong-si, South Korea

Yonghun Kwon