Samsung Display Co., Ltd.

Yongho Yang

Seongmin Wang

Youngin Hwang

Seong Min Wang

Jihye Kong

Sungho Kim

Jina Lee

Eungtaek Kim

Elly Gil

Seongbaik Chu

Joohyeon Jo

Deukjong Kim

Jeong-Soo Lee

Beohmrock Choi

Jeongsoo Lee

Hyojin Kim

A display device includes pixels, and each pixel is connected between a first electrode or a second electrode of a driving transistor and a bias line, includes a bias transistor configured to transfer a bias voltage applied from the bias line to the first electrode or the second electrode of the driving transistor during a bias period. Bias voltages applied to the pixels emitting light of different colors are different from each other.

Display device

A display device includes: a first electrode layer; a semiconductor layer including a source region, a drain region, and a channel region, wherein at least a portion of the source region or the drain region overlaps the first electrode layer; a second electrode layer arranged adjacent to the channel region; a third electrode layer overlapping the second electrode layer and at least a portion of the source region or the drain region; and a power line electrically connected to the first electrode layer and the third electrode layer.

Display device having power line electrically connected to electrode layers located above and below transistor

A display apparatus including a first thin-film transistor (TFT) including a first semiconductor layer including a silicon semiconductor; a second TFT including a second semiconductor layer including an oxide semiconductor; a first shielding layer configured to overlap the first TFT and positioned between a substrate and the first TFT; and a second shielding layer configured to overlap the second TFT and positioned between the substrate and the second TFT.

Display apparatus

A display device includes a substrate, a thin film transistor disposed on the substrate, and a display element electrically connected to the thin film transistor. The substrate includes a first substrate layer, a second substrate layer disposed on the first substrate layer, a first barrier layer disposed between the first substrate layer and the second substrate layer, and a first ultraviolet light blocking layer disposed between the first substrate layer and the second substrate layer.

Display device having ultraviolet light blocking properties

A display apparatus includes: a first thin-film transistor (TFT) including a first semiconductor layer including a silicon semiconductor; a second TFT including a second semiconductor layer including an oxide semiconductor; a first shielding layer configured to overlap the first TFT and positioned between a substrate and the first TFT; and a second shielding layer configured to overlap the second TFT and positioned between the substrate and the second TFT.

A pixel circuit includes a light-emitting element, a first transistor, a second transistor operating based on a first gate signal, a third transistor operating based on a second gate signal, a fourth transistor operating based on an initialization control signal, a fifth transistor operating based on an emission control signal, a sixth transistor operating based on the emission control signal, a seventh transistor, of which one terminal is connected to the light-emitting element, operating based on a bias control signal, an eighth transistor, of which one terminal is connected to the driving transistor, operating based on the bias control signal, a storage capacitor, and the light-emitting element. The circuit performs a display-scan operation where a driving time of a panel driving frame is a predetermined duration, and performs a display-scan operation and a self-scan operation where the driving time is longer than the predetermined duration.

Pixel circuit and method for improving image quality at low driving frequency

A pixel circuit includes a light-emitting element, a first transistor, a second transistor operating based on a first gate signal, a third transistor operating based on a second gate signal, a fourth transistor operating based on an initialization control signal, a fifth transistor operating based on an emission control signal, a sixth transistor operating based on the emission control signal, a seventh transistor, of which one terminal is connected to the light-emitting element, operating based on a bias control signal, an eighth transistor, of which one terminal is connected to the driving transistor, operating based on the bias control signal, a storage capacitor, and the light-emitting element. The pixel circuit performs a display-scan operation in a first case where a driving time of a panel driving frame is a minimum driving time and performs a display-scan operation and at least one self-scan operation in a second case where the driving time is different from the minimum driving time.

An organic light-emitting display apparatus includes a substrate, a thin film transistor on the substrate, a pixel electrode electrically connected to the thin film transistor, a pixel defining layer having an opening exposing a center portion of the pixel electrode and covering an edge of the pixel electrode, and a first low reflection layer between the pixel electrode and the pixel defining layer, the first low reflection layer including a metal.

Organic light-emitting display apparatus and manufacturing method thereof

An organic light-emitting display apparatus and a method of manufacturing the same, the organic light-emitting display apparatus including a first substrate that includes a display area and a peripheral area; a second substrate that faces the first substrate; a first metal layer in the peripheral area of the first substrate, the first metal layer including a plurality of holes; and a sealing member that bonds the first substrate to the second substrate, wherein at least one of the plurality of holes includes a region that does not overlap the sealing member.

Organic light-emitting display apparatus and method of manufacturing the same

A thin-film transistor (TFT) array substrate includes a driving TFT, a storage capacitor, a first wire, a first interlayer insulating film, a second interlayer insulating film, and a second wire. The storage capacitor has a first electrode connected to a driving gate electrode of the driving TFT and a second electrode on and insulated from the first electrode. The first wire is on a same layer as the driving gate electrode. The first interlayer insulating film covers the first electrode and the first wire. The second interlayer insulating film is on the first interlayer insulating film and includes an opening that exposes part of the first interlayer insulating film. The second wire is on the second interlayer insulating film and at least partially overlaps the first wire. The second electrode is in the opening of the second interlayer insulating film.

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Yongin-si, South Korea

Yongho Yang