Samsung Electronics Co., Ltd.

Yongho Jeon

Keunhee Bai

Sekoo Kang

Dongseok Lee

Sungwoo Myung

A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the second gate structure and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.

Semiconductor device including gate structure and separation structure

An integrated circuit device includes a first fin-type active area and a second fin-type active area protruding from a substrate and extending in a first direction, an element isolation layer between the first and second fin-type active areas on the substrate, first semiconductor patterns being on a top surface of the first fin-type active area and having channel areas, second semiconductor patterns being on a top surface of the second fin-type active area and having channel areas, a first gate structure extending on the first fin-type active area in a second direction and including a first work function control layer surrounding the first semiconductor patterns and comprising a step portion on the element isolation layer, and a second gate structure extending on the second fin-type active area in the second direction and including a second work function control layer surrounding the second semiconductor patterns.

Growing community of inventors

Hwaseong-si, South Korea

Yongho Jeon