Stmicroelectronics Gmbh

Stmicroelectronics Asia Pacific Pte Limited

St Assembly Test Services Inc.

Stmicroelectronics (Grenoble 2) Sas

Stmicroelectronics R&d Limited

Oip Technology Pte Ltd.

Yonggang Jin

Jerome Teysseyre

Kah Wee Gan

Yun Liu

Yaohuang Huang

Anandan Ramasamy

Won Sun Shin

Romain Coffy

Suman Cherian

Colin Campbell

Wee Chin Judy Lim

David A Lawson

Wan Lay Looi

Xavier Baraton

Kyaw Oo Aung

Puay Gek Chua

Lun Zhao

Jae-Yong Song

Ravi Shankar

Laurent Herard

Faxing Che

WeeChinJudy Lim

How Yuan Hwang

Kiyoshi Kuwabara

Shelley Yong

A silicon photonic package and a method of fabricating the package are disclosed. The silicon photonic package includes an optical waveguide structure, a heat dissipation structure, a plastic encapsulation layer, first and second structures. The optical waveguide structure is a right trapezoidal structure, and a surface where a non-right angle leg thereof is a totally reflecting surface capable of totally reflecting an optical signal that enters the optical waveguide structure from a surface where a right angle leg is disposed in a direction parallel to bases to a plane where a front face of the plastic encapsulation layer is disposed. The heat dissipation structure and the optical waveguide structure are spaced apart from each other and both embedded in the plastic encapsulation layer. The optical waveguide structure of the present invention allows a great reduction in loss of an optical signal incurred by its propagation in the optical waveguide structure.

Silicon photonic package and method of fabricating the same

A compact microelectronic gas sensor module includes electrical contacts formed in such a way that they do not consume real estate on an integrated circuit chip. Using such a design, the package can be miniaturized further. The gas sensor is packaged together with a custom-designed Application Specific Integrated Circuit (ASIC) that provides circuitry for processing sensor signals to identify gas species within a sample under test. In one example, the output signal strength of the sensor is enhanced by providing an additional metal surface area in the form of pillars exposed to an electrolytic gas sensing compound, while reducing the overall package size. In some examples, bottom side contacts are formed on the underside of the substrate on which the gas sensor is formed. Sensor electrodes may be electrically coupled to the ASIC directly, or indirectly by vias.

Compact microelectronic integrated gas sensor

An optical detection sensor functions as a proximity detection sensor that includes an optical system and a selectively transmissive structure. Electromagnetic radiation such as laser light can be emitted through a transmissive portion of the selectively transmissive structure. A reflected beam can be detected to determine the presence of an object. The sensor is formed by encapsulating the transmissive structure in a first encapsulant body and encapsulating the optical system in a second encapsulant body. The first and second encapsulant bodies are then joined together. In a wafer scale assembling the structure resulting from the joined encapsulant bodies is diced to form optical detection sensors.

Wafer level packaging, optical detection sensor and method of forming same

One or more embodiments are directed to semiconductor packages that include a pillar and bump structures. The semiconductor packages include a die that has recess at a perimeter of the semiconductor die. The semiconductor package includes an encapsulation layer that is located over the semiconductor die filling the recess and surrounding side surfaces of the pillars. The package may be formed on a wafer with a plurality of die and may be singulated into a plurality of packages.

Semiconductor packages with pillar and bump structures

Embodiments of the present disclosure are directed to optical packages having a package body that includes a light protection coating on at least one surface of a transparent material. The light protection coating includes one or more openings to allow light to be transmitted to the optical device within the package body. In one embodiment, the light protection coating and the openings allow substantially perpendicular radiation to be directed to the optical device within the package body. In one exemplary embodiment the light protection coating is located on an outer surface of the transparent material. In another embodiment, the light protection coating is located on an inner surface of the transparent material inside of the package body.

Semiconductor optical package and method

A method for making an optical proximity sensor includes forming a package top plate having an optical transmit opening and an optical receive opening extending therethrough, attaching an optical transmit element to the package top plate adjacent the optical transmit opening, and attaching an optical receive element to the package top plate adjacent the optical receive opening. A package body is formed onto the package top plate to define an optical transmit cavity receiving the optical transmit element and an optical receive cavity receiving the optical receive element.

Method for making an optical proximity sensor by attaching an optical element to a package top plate and forming a package body to define an optical transmit cavity and an optical receive cavity

Aspects of the invention are directed towards an integrated circuit package and method of forming the same, and more particularly to a redistributed chip packaging for an integrated circuit. The integrated circuit package includes an integrated circuit having a protective material on at least a portion of the integrated circuit. A lead frame is coupled to the integrated circuit and a conductive layer is also coupled to the interconnect. A solder ball is coupled to the conductive layer and a passivation layer is on the conductive layer. Active and passive components are electrically coupled to the integrated circuit.

Integrated circuit package and method of forming the same

A gas sensor device may include a gas sensor integrated circuit (IC) having a gas sensing surface, and bond pads adjacent to the gas sensing surface, and a frame having gas passageways extending therethrough adjacent the gas sensing surface. The gas sensor device may include leads, each having a proximal end spaced from the frame and bonded to a respective bond pad, and a distal end extending downwardly from the proximal end, and encapsulation material filling the space between the proximal ends of the leads and the frame.

Gas sensor device with frame passageways and related methods

One or more embodiments are directed to a system-in-package (SiP) that includes a plurality of semiconductor chips and an interposer that that are molded in an encapsulation layer together. That is, a single processing step may be used to encapsulate the semiconductor chips and the interposer in the encapsulation layer. Furthermore, prior to setting or curing, the encapsulation layer is able to flow between the semiconductor chips and the interposer to provide further mechanical support for the semiconductor chips. Thus, the process for forming the SiP is reduced, resulting in a faster processing time and a lower cost. Additionally, one or more embodiments described herein reduce or eliminate warpage of the interposer.

System-in-packages and methods for forming same

An image sensor device may include a bottom interconnect layer, an image sensing IC above the bottom interconnect layer and coupled thereto, and an adhesive material on the image sensing IC. The image sensor device may include an IR filter layer above the lens layer, and an encapsulation material on the bottom interconnect layer and surrounding the image sensing IC, the lens layer, and the IR filter layer. The image sensor device may include a top contact layer above the encapsulation material and including a dielectric layer, and a contact thereon, the dielectric layer being flush with adjacent portions of the IR filter layer.

Image sensor device with IR filter and related methods

An electronics assembly includes a semiconductor die assembly, an enclosure affixed to the semiconductor die assembly, the enclosure defining first and second chambers over the semiconductor die assembly, and first and second optical elements mounted in the first and second chambers, respectively. The semiconductor die assembly includes a semiconductor die encapsulated in a molded material, an encapsulation layer located on the top surface of the semiconductor die, and at least one patterned metal layer and at least one dielectric layer over the encapsulation layer. Conductive pillars extend through the encapsulation layer for electrical connection to the semiconductor die. The encapsulation layer blocks optical crosstalk between the first and second chambers. A method is provided for making the electronics assembly.

Optoelectronics assembly and method of making optoelectronics assembly

A method of making image sensor devices may include forming a sensor layer including image sensor ICs in an encapsulation material, bonding a spacer layer to the sensor layer, the spacer layer having openings therein and aligned with the image sensor ICs, and bonding a lens layer to the spacer layer, the lens layer including lens in an encapsulation material and aligned with the openings and the image sensor ICs. The method may also include dicing the bonded-together sensor, spacer and lens layers to provide the image sensor devices. Helpfully, the method may use WLP to enhance production.

Growing community of inventors

Singapore, Singapore

Yonggang Jin