Samsung Electronics Co., Ltd.

Yongcheol Bae

Junghwan Choi

Won Young Lee

Yoon-Joo Eom

Joon-Young Park

Joosun Choi

Seongjin Jang

Byongmo Moon

An operation method of a semiconductor device is disclosed. The semiconductor device includes separate first and second dies in a package and receives first types of signals through first and second respective channels independent of each other and corresponding to the first and second respective dies. The method includes a step in which when information for controlling internal operations of the first and second dies is first applied to the first die through a first pad, the first die performs the internal operation and also transmits the information to the second die through an internal interface connecting the first die and the second die, and a step in which when the information is transmitted to the second die, the second die performs the internal operation.

Multi channel semiconductor device having multi dies and operation method thereof

A multi channel semiconductor device is disclosed. The multi channel device may include a substrate, a first die on the substrate and having a first channel to function as a first chip; and a second die on the substrate and having a second channel different from the first channel to function as a second chip and including the same storage capacity and physical size as the first die. An internal interface is disposed between the first and second dies. The internal interface is configured to transmit information for controlling internal operations of the first and second dies and first applied to a first recipient die of the first and second dies to the other die.

A multi channel semiconductor device may include a substrate, a first die on the substrate and having a first channel to function as a first chip; and a second die on the substrate and having a second channel different from the first channel to function as a second chip and including the same storage capacity and physical size as the first die. An internal interface is disposed between the first and second dies. The internal interface is configured to transmit information for controlling internal operations of the first and second dies and first applied to a first recipient die of the first and second dies to the other die.

Provided is a semiconductor device to prevent DC current from flowing between differential input signals. The semiconductor device includes a first input unit configured to buffer a first signal of differential input signals, a second input configured to buffer a second signal of the differential input signals, and a latch coupled between a first repeating node of the first input unit and a second repeating node of the second input unit to prevent duty variation of the first and second signals. The semiconductor device further includes a latch controller configured to selectively switch the operation of the latch based on states of the first and second signals appearing at the first and second repeating nodes during a time interval before preambles of the differential input signals are received.

Semiconductor device including latch controller for preventing DC current from flowing between differential signals and method of operating same

An integrated circuit includes a data input such as a data pad for receiving an external data signal input and an on-die termination (ODT) information input for receiving ODT information from an external device. An ODT circuit selectively couples a termination resistor to the data pad based on the ODT information. An input buffer is coupled to the data pad for determining data that is input into the pad using a reference voltage. A reference voltage generator is coupled to the input buffer and generates the reference voltage on the basis of the ODT information.

Growing community of inventors

Yongin-si, South Korea

Yongcheol Bae