The University of North Carolina at Charlotte

Yong Zhang

Raphael Tsu

Naili Yue

Jason Kendrick Marmon

Thomas Andrew Schmedake

Michael George Walter

Antardipan Pal

Dennis Yau

Margaret Kocherga

A variety of hexacoordinate pincer complexes are described herein having electronic structure advantageous for electronic and/or optoelectronic applications. In some embodiments, the pincer complexes are luminescent, exhibiting fluorescence and/or phosphorescence. Briefly, a hexacoordinate complex comprises a central atom selected from the group consisting of silicon, germanium, and tin, and two pincer ligands bound to the central atom, wherein the hexacoordinate complex is luminescent. In another aspect, a hexacoordinate complex comprises a central atom selected from the group consisting of silicon, germanium and tin, and two pincer ligands bound to the central atom, wherein the difference between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the hexacoordinate complex is at least 1.5 eV.

Hexacoordinate pincer complexes and applications thereof

Example memory devices and example methods for using memory devices are described. An example memory device may include a first electrical bitline, a second electrical bitline, a bitcell, and an optical waveguide wordline. The bitcell is configured to store a bit value and includes storage circuitry and a pair of light-effect transistor access devices. The storage circuitry includes at least one transistor. The pair of light-effect transistor access devices are arranged for connecting the bitcell to the first electrical bitline and the second electrical bitline. The optical waveguide wordline is arranged for routing an optical signal to the pair of light-effect transistor access devices.

Integrated circuits with single-functional-unit level integration of electronic and photonic elements

Example photoconductive devices and example methods for using photoconductive devices are described. An example method may include providing a photoconductive device having a metal-semiconductor-metal structure. The method may also include controlling, based on a first input state, illumination of the photoconductive device by a first optical beam during a time period, and controlling, based on a second input state, illumination of the photoconductive device by a second optical beam during the time period. Further, the method may include detecting an amount of current produced by the photoconductive device during the time period, and based on the detected amount of current, providing an output indicative of the first input state and the second input state. The example devices can be used individually as discrete components or in integrated circuits for memory or logic applications.

Light-effect transistor (LET)

Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any foreign substrate that can withstand the growth temperature without the limitation matching condition typically required for epitaxial growth.

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Charlotte, NC, United States of America

Yong Zhang