Yangtze Memory Technologies Co., Ltd.

Wuhan Hggenuine Optics Tech Co.,ltd.

Yong Zhang

Haohao Yang

Enbo Wang

Qianbin Xu

Jialan He

Li Hong Xiao

Yushi Hu

Qian Tao

Mei Lan Guo

Qianbing Xu

Ruo Fang Zhang

Fushan Zhang

Jian Hua Sun

Kun Shu

Qijian Xu

Miao Shen

Yu Zhai

An optical module optimized for EMI shielding performance and electromagnetic shielding structure of the optical module includes a base, an upper cover, and an unlocking device connected by an unlocking handle and a movable unlocking piece; the base is butted and clamped with the upper cover to form a limiting groove for accommodating the unlocking latch on both sides of the movable unlocking piece, the unlocking latch is correspondingly slidably fitted in the limiting groove; the upper end of the unlocking latch on each side is provided with a first notch, which is used to make way for the base EMI lug boss set on the base, the lower end of the unlocking latch on each side is provided with a second notch, which is used to make way for the upper cover EMI lug boss set on the upper cover.

Optical module optimized for EMI shielding performance and electromagnetic shielding structure of the optical module

Aspects of the disclosure provide a method for fabricating semiconductor device. The method includes characterizing an etch process that is used to etch channel holes and dummy channel holes in a stack of alternating sacrificial gate layers and insulating layers upon a substrate of a semiconductor device. The channel holes are in a core region and the dummy channel holes are in a staircase region. The stack of alternating sacrificial gate layers and insulating layers extend from the core region into in the staircase region of a stair-step form. The method further includes determining a first shape for defining the dummy channel holes in a layout based on the characterization of the etch process. The first shape is different from a second shape for defining the channel holes.

Vertical memory devices

Embodiments of 3D memory devices having an inter-deck plug and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a first memory deck including interleaved conductor and dielectric layers above the substrate, a second memory deck including interleaved conductor and dielectric layers above the first memory deck, and a first and a second channel structure each extending vertically through the first or second memory deck. The first channel structure includes a first memory film and semiconductor channel along a sidewall of the first channel structure, and an inter-deck plug in an upper portion of the first channel structure and in contact with the first semiconductor channel. A lateral surface of the inter-deck plug is smooth. The second channel structure includes a second memory film and semiconductor channel along a sidewall of the second channel structure. The second semiconductor channel is in contact with the inter-deck plug.

Inter-deck plug in three-dimensional memory device and method for forming the same

Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the memory stack. The memory string includes a semiconductor plug in a lower portion of the memory string, a protective dielectric layer on the semiconductor plug, and a memory film above the protective dielectric layer and along a sidewall of the memory string.

Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

Growing community of inventors

Wuhan, China

Yong Zhang