Boe Technology Group Co., Ltd.

Chengdu Boe Optoelectronics Technology Co., Ltd.

Beijing Superstring Academy of Memory Technology

Beijing Boe Display Technology Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Changxin Memory Technologies, Inc.

Cambricon Technologies Corporation Limited

Beijing Research Institute of Telemetry

Aerospace Long March Launch Vehicle Technology Co., Ltd

Yong Yu

Shi Shu

Chuanxiang Xu

Haitao Huang

Yang Yue

Qi Yao

Jing Li

Chang Zhang

Guangcai Yuan

Deyuan Xiao

Guangsu Shao

Tong Yang

Renquan Gu

Wei He

Zhao Cui

Hao Sun

Tianshi Chen

Yunji Chen

Jing Liang

Wenbo Wang

Xue Dong

Wei Wang

Wei Li

Xin Wang

Shaoli Liu

Rui Huang

Qian Wang

Feng Zhang

Hao Liu

Jifeng Tan

Min Huang

Jing Liu

Yun Qiu

Ce Ning

Wei Peng Huang

Zhongyuan Sun

Qi Guo

Hua Yin Huang

Feng Liu

Jiangnan Lu

Lizhong Wang

Wenqu Liu

Yuan Yao

Liwen Dong

Shuang Zhang

Kang Guo

Yujie Liu

Ge Shi

Detian Meng

Chuanyan Lan

Lixia Shen

Xuerui Gong

Jiangsheng Wang

Zhiguang Zhang

Taehyun Kim

Qun Jia

Lianbin Liu

Guoqiang Wu

Huili Wu

Shipei Li

Xue Jiang

Jin Dai

Xiaohuan Chang

Lina Jing

Shaohui Li

Tae Hyun Kim

Shunhang Zhang

Hongrun Wang

Qingyu Huang

Hui Lu

Yuanyuan Chai

Wei Huang

Ruoyu Ma

Teng Chen

Feng Liao

Kwang Gyun Jang

Qifeng Li

Jianjun Zhao

Jinchao Zhang

Chuanyong Li

Haowei Zou

Yongle Wang

Jiaqin Zhang

Lianghai Li

Weihong Wu

Wenhong Liu

Wenqing Xue

Renjie Ding

Zhenwen Hu

Zibo Ni

Ge Sun

Dajun Wang

Jinchao Mou

Rongrong Xu

A display substrate includes a base; and a first display region and a second display region disposed on the base, where a light transmittance of the first display region is greater than a light transmittance of the second display region, and the first display region includes one or more first sub-regions and one or more second sub-regions; where the one or more first sub-regions include a plurality of first sub-pixels, and each of the first sub-pixels includes a first electrode disposed on the base, a light emitting layer disposed on the first electrode, and a second electrode disposed on the light emitting layer. A display panel, a display device and a method of manufacturing a display substrate are further disclosed.

Display substrates for full-screen display and methods of manufacturing display substrate, display panels, display devices

The embodiments of the present disclosure provide a display panel, including: a base substrate, a first electrode layer, a luminescent material layer, a second electrode layer, an elastic lens layer and at least one light wavelength conversion layer arranged in sequence. The luminescent material layer is configured to emit an excitation light, the at least one light wavelength conversion layer is configured to convert the excitation light emitted from the luminescent material layer into light of a predetermined color, and the elastic lens layer is configured to converge the excitation light emitted from the luminescent material layer. The embodiments of the present disclosure further provide an electronic device and a method of manufacturing a display panel.

Display panel, electronic device, and method of manufacturing display panel

Aspects for forward propagation of a multilayer neural network (MNN) in a neural network processor are described herein. As an example, the aspects may include a computation module that includes a master computation module and one or more slave computation modules. The master computation module may be configured to receive one or more groups of MNN data. The one or more groups of MNN data may include input data and one or more weight values and wherein at least a portion of the input data and the weight values are stored as discrete values. The one or more slave computation modules may be configured to calculate one or more groups of slave output values based on a data type of each of the one or more groups of MNN data.

Apparatus and methods for forward propagation in neural networks supporting discrete data

The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base, and bit lines, word lines, active pillars, and a memory structure that are located on the base. The bit line extends along a first direction, the word line extends along a second direction, the first direction is one of a direction perpendicular to a surface of the base or a direction parallel to the surface of the base, and the second direction is the other of the direction perpendicular to the surface of the base or the direction parallel to the surface of the base. The active pillars are parallel to the base and arranged at intervals, the word line surrounds a channel region of the active pillar, the memory structure surrounds a support region of the active pillar.

Semiconductor structure and manufacturing method thereof

The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure. The manufacturing method of a semiconductor structure includes: providing a substrate; forming a plurality of active pillars on the substrate, where each of the active pillars includes a first segment, a second segment, and a third segment; forming a first gate oxide layer on a sidewall of the second segment, a top surface of the first segment, and a bottom surface of the third segment; and forming a second gate oxide layer on the first gate oxide layer, where a length of the second gate oxide layer is less than that of the first gate oxide layer, and a thickness of the second gate oxide layer is greater than that of the first gate oxide layer.

Manufacturing method of semiconductor structure and semiconductor structure

The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure. The manufacturing method of a semiconductor structure includes: providing a substrate; forming an silicon pillar on the substrate; pre-processing the silicon pillar, to form an active pillar including a first segment, a second segment, and a third segment, where the second segment includes a first sub-segment and a second sub-segment, and a cross-sectional area of the second sub-segment is smaller than that of the first sub-segment; forming a gate oxide layer; and forming a word line structure surrounding the second segment, where the word line structure includes a first word line structure and a second word line structure that are made of different materials.

A display panel and a display apparatus. The display panel includes a display substrate, a first printed circuit board and a second printed circuit board, wherein the display substrate includes a display area and a bonding area located on a side of the display area, the bonding area is connected with the first printed circuit board through a first flexible printed circuit, and the first printed circuit board is connected with the second printed circuit board through a second flexible printed circuit; and the first printed circuit board is a wiring circuit board mounted with a signal connection line, the second printed circuit board is a drive circuit board mounted with a drive chip, and an orthographic projection of the second printed circuit board on a plane of the display panel does not overlap with an orthographic projection of the display substrate on the plane of the display panel.

Display panel and display apparatus

A near-to-eye display device and wearable apparatus are provided. The near-to-eye display device includes: pixel islands and micro-lenses in one-to-one correspondence with the pixel islands; wherein each pixel island emits light to a corresponding micro-lens so that the light reaches a predetermined viewing position after passing through the corresponding micro-lens. The near-to-eye display device further includes: super-lens units each including at least one super-lens; wherein the super-lens units are in one-to-one correspondence with the pixel islands; each super-lens unit is on a side of a corresponding pixel island proximal to the corresponding micro-lens, and an orthogonal projection of the super-lens unit on a plane where the corresponding pixel island is located covers the corresponding pixel island. The super-lens unit converges light, which is within a predetermined angle, emitted by the corresponding pixel island, to reduce a diffusion angle of the light emitted by the corresponding pixel island.

Near-to-eye display device and wearable apparatus

The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure, and relates to the technical field of semiconductors. The manufacturing method of a semiconductor structure includes: providing a substrate; forming active pillars arranged at intervals on the substrate, the active pillar includes a first segment, a second segment, and a third segment that are connected sequentially along a first direction; forming a gate oxide layer on sidewalls of each of the second segment and the third segment; and forming a word line structure on a sidewall of the gate oxide layer, the word line structure includes a first word line structure and a second word line structure that are made of different materials, and the first word line structure is connected to the sidewall of the gate oxide layer, and partially covers the second word line structure.

A display driving circuit, a method for driving a display panel, and a display device are provided, relating to display technologies. The display driving circuit includes a first display driving circuit, a second display driving circuit, a power circuit and a TCON circuit. The first display driving circuit is configured to send a first control signal to the second display driving circuit in response to that a level of the first power signal sent by the power circuit reaches a second level, and send a second control signal to the second display driving circuit in response to that a level of the communication indication signal sent by the TCON circuit reaches a fourth level; the second display driving circuit is configured to: turn off the plurality of pixels in response to the first control signal, and drive the plurality of pixels in response to the second control signal in the state of completing initialization.

Display driving circuit, method for driving display panel, and display device for optimizing flicker prevention

A transistor, a 3D memory and a manufacturing method therefor, and an electronic device are provided in the present application. The 3D memory includes a plurality of layers of memory cells stacked in a direction perpendicular to a substrate, and a word line. A memory cell includes a transistor which includes a source and a drain, a gate extending in the direction perpendicular to the substrate, a semiconductor layer surrounding a sidewall of the gate. The semiconductor layer includes a source contact region and a drain contact region arranged at intervals. A channel between the source contact region and the drain contact region is a horizontal channel, and the word line extends in the direction perpendicular to the substrate and penetrates through the memory cells of different layers.

Transistor, 3D memory and manufacturing method therefor, and electronic device

A method for manufacturing a semiconductor device includes the following operations. A substrate is provided. Bit lines extending in a first direction are formed on the substrate. A first dielectric layer is formed on the bit lines. The first dielectric layer is etched from top to bottom to form channel holes in the first dielectric layer, in which the channel holes expose the bit lines. A channel layer is formed in each channel hole, in which the channel layer includes a first source/drain area, a channel area and a second source/drain area which are arranged from bottom to top, the first source/drain area is electrically connected to a respective one bit line. Word lines extending in a second direction are formed in the first dielectric layer.

Method for manufacturing semiconductor device, semiconductor device, and stack device

A display substrate includes a base substrate, a pixel definition layer, an isolation layer, and an isolated layer. The pixel definition layer includes pixel openings penetrating through the pixel definition layer. The isolation layer is not overlapping with the pixel openings. The isolation layer includes a first isolation portion and a second isolation portion. A slope angle formed by at least one side edge and a bottom edge in a cross section of the second isolation portion is an obtuse angle. There is a gap between the first isolation portion and the second isolation portion at the obtuse angle. The isolated layer includes a first isolated portion covering the isolation layer, and a second isolated portion and a third isolated portion on both sides of the first isolation portion respectively. The thickness of the first isolation portion is larger than the thickness of the isolated layer.

Display substrate and manufacturing method therefor, and display panel and display device

The present disclosure relates to a flip-chip and a chip packaging structure. The flip-chip includes: a driver chip having a package surface facing a wiring substrate; and a plurality of conductive connectors. Any one of the plurality of conductive connectors includes a conductive bump connected to the package surface and a conductive extension portion on a side of the conductive bump away from the driver chip.

Flip chip and chip packaging structure

The present application relates to the technical field of display, and discloses an OLED display panel and a display device. The OLED display panel includes a drive backplane; and an OLED device, an encapsulation structure and a color resistor structure which are arranged on the drive backplane; the encapsulation structure and the color resistor structure are located on a side, facing away from the drive backplane, of the OLED device, and the color resistor structure includes a chromatic color resistor layer, a first BM and a second BM; and the first BM is located on a side, facing away from the drive backplane, of the chromatic color resistor layer, and the second BM is located on a side, facing the drive backplane, of the chromatic color resistor layer.

Oled display panel and display device

Growing community of inventors

Beijing, China

Yong Yu