Electronics and Telecommunications Research Institute

Samsung Display Co., Ltd.

Postech Research and Business Development Foundation

Hanbat National University Industry-academic Cooperation Foundation

Yong-Young Noh

Jae Bon Koo

In-Kyu You

Yong Suk Yang

Soon Won Jung

Kang-Jun Baeg

Jun Hyung Lim

Hyungjun Kim

Soyoung Koo

Dong-Yu Kim

Kang Dae Kim

Joon-Hyuk Cho

Huihui Zhu

A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: ABC[XY], where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.

Thin film transistor comprising a low lead content halide anion perovskite and display device including the thin film transistor

Provided are a multi-layer interconnection structure and a manufacturing method thereof. The multi-layer interconnection structure includes a substrate; a first wiring on the substrate; an interlayer insulation layer on the first wiring; a second wiring on the interlayer insulation layer; and a via contact including at least one conductive filament penetrating through the interlayer insulation layer between the second wiring and the first wiring to be electrically connected to the first wiring and the second wiring.

Multi-layer interconnection structure

An organic insulating layer composition includes a polymer mixture including 50 parts to 90 parts by volume of an organic polymer and 10 parts to 50 parts by volume of an amorphous polymer, wherein the organic polymer includes at least a first repeating unit and a second repeating unit, the first and second repeating units each being substituted with at least one of fluorine or chlorine, a total number of fluorine and chlorine atoms in the first repeating unit being different from a total number of fluorine and chlorine atoms in the second repeating unit, and an organic solvent.

Organic insulating layer composition, method of forming organic insulating layer, and organic thin film transistor including the organic insulating layer

Method of making a multi-layer interconnecting structure

A composition for an organic dielectric, includes a compound represented by Formula 1 below; and a cross-linking agent, wherein, in Formula 1, Ris any one of hydrogen, hydroxyl group, ester group, amide group, or alkyl group or alkoxy group of a carbon number of 1 to 12, Ris selected from electrolytic functional groups, each of a and b is a positive integer, and the ratio of b to a (b/a) is larger than 0 and smaller than 99, 

Composition for an organic dielectric

Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.

Resistive memory device and method of fabricating the same

Provided are a composition for organic thin film transistors including a material including an anthracenyl group and a cross-linker including a maleimide group, an organic thin film transistor formed by using the composition, and a method for manufacturing the same.

Composition for organic thin film transistor, organic thin film transistor formed by using the same, and method for forming the organic film transistor

Growing community of inventors

Daejeon, South Korea

Yong-Young Noh