Applied Materials, Inc.

Shandong Luneng Intelligence Technology Co., Ltd

Yong Yang

Srinivas Gandikota

Yixiong Yang

Jacqueline S Wrench

Seshadri Ganguli

Steven C H Hung

Mandyam Sriram

Song Chen

Shiyou Mu

Xiangjun Meng

Antai Zuo

Juntian He

Mengchao Fu

Mohith E Verghese

Joung Joo Lee

Annamalai Lakshmanan

Bin Jiang

Pradeep Subrahmanyan

Feihu Wang

Jose Alexandro Romero

Jianqiu Guo

Kunal Bhatnagar

Jinlong Zhao

Hui Qi

Lin Tan

Yabo Zhao

Hailong Zhang

Tao Cao

Chongguang Fu

Zonghui Zhang

Wenzheng Shang

Yong Hu

A metal gate stack on a substrate comprises: an interfacial layer on the substrate; a high-κ metal oxide layer on the interfacial layer, the high-κ metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region comprising niobium (Nb); a high-κ metal oxide capping layer on the high-κ metal oxide layer; a positive metal-oxide-semiconductor (PMOS) work function material above the high-κ metal oxide capping layer; and a gate electrode above the PMOS work function material. The dipole region is formed by driving Nb species of a Nb-based film into the high-κ metal oxide layer to form a dipole region.

MOSFET gate engineerinng with dipole films

Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

Enhancing gapfill performance of dram word line

A sacrificial sealing layer is formed on a high-κ metal gate (HKMG) stack to suppress oxidants, e.g., oxygen and water, from impacting the metal gate stack, thus preserving the device EOT. The method integrated processes that include forming an interfacial layer on the substrate; forming a high-κ metal oxide layer on the interfacial layer, the high-κ metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region; depositing a capping layer on the high-κ metal oxide layer; and forming a sacrificial sealing layer on the capping layer. The dipole region is formed by driving a dopant species, e.g., zinc (Zn), vanadium (V), tungsten (W), molybdenum (Mo), ruthenium (Ru), titanium (Ti), tantalum (Ta), zirconium (Zr), aluminum (Al), niobium (Nb), or mixtures thereof, of a dipole film into the high-κ metal oxide layer to form a dipole region.

Amorphous silicon-based scavenging and sealing EOT

A memory device comprises: a stack of alternating silicon oxide layers and wordline layers; each of the wordline layers comprising dipole regions adjacent to the silicon oxide layers, the dipole regions comprising a nitride, a carbide, an oxide, a carbonitride, or combinations thereof of a dipole metal. The dipole regions are formed by driving a dipole film into a gate oxide layer of the wordline layers, and any residual dipole film is removed.

V-NAND stacks with dipole regions

Methods for forming a semiconductor structure are described. The method includes cleaning a substrate to form a substrate surface substantially free of oxide, exposing the substrate surface to a first molybdenum precursor, and exposing the substrate surface to a reactant to selectively deposit a first molybdenum film on the substrate surface. The method may be performed in a processing chamber without breaking vacuum. The method may also include forming one or more of a cap layer and a liner and annealing the substrate. The method may also include depositing a second molybdenum film on the substrate surface.

Methods of forming molybdenum contacts

Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

Low resistivity DRAM buried word line stack

Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 &#x212b; to less than or equal to 50 &#x212b;. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfOas a high-&#x3ba; metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.

PMOS high-K metal gates

A method of forming a high-dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-dielectric cap layer, and removing the sacrificial silicon cap layer.

Treatments to enhance material structures

A smart, integrated charging device for electric vehicles is provided. The alternating current input module is connected to an electricity metering module via an alternating current input switch. The charging module is connected to the electricity metering module via a module alternating current switch and an alternating current bus, and is connected to an output monitoring module via a direct current bus. The output monitoring module is connected to the monitoring and general control module (). The direct current output module is connected to the output monitoring module () via a direct current output switch. The lightning protection module is connected to the direct current bus. The charging module utilizes smart power combination and multiple output coordination to enable output with current sharing and the automatic balance control technology.

Smart, integrated charging device for electric vehicles

A system and method for monitoring coordination/control of a multi-output integrated charger for electric automobiles, comprising a voltage/current demand collection module, an optimal-policy design module, and a policy execution module. The voltage/current demand collection module transmits demand information to the optimal-policy design module; the optimal-policy design module provides policy design results to the policy execution module; the policy execution module feeds back execution results to the optimal-policy design module; and, the optimal-policy design module feeds back the results to the voltage/current demand collection module. By means of real-time selection of an optimal power output policy, the present invention solves the safety, timeliness, and versatility issues concerning demand for power, voltage, and current during the charging process.

System and method for monitoring coordination/control of multi-output integrated charger for electric automobile

A battery replacement robot with a mobile storage rack includes a mechanical part and an electrical control part. The electrical control part controls a battery replacement device to place, in one step, all battery boxes required by one side of an electric bus that needs battery replacement onto a battery box storage rack. A horizontal moving unit moves to a position where a battery needs to be replaced. A battery box replacement device takes down a spent battery box from the electric bus; the battery box replacement device rotates towards one side around a Y axis, and raises or lowers the spent battery box so as to put the spent battery on the battery box storage rack; then the battery box replacement device takes down a charged battery box from the battery box storage rack, rotates to the original position, and installs the battery box in the electric bus.

Battery replacement robot with mobile storage rack and battery replacement method

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Shandong, China

Yong Yang