United Semiconductor (xiamen) Co., Ltd.

Yong Xie

Wen Yi Tan

Shih-Hsien Huang

Qiang Gao

A semiconductor manufacturing method includes providing a substrate, forming a silicon germanium epitaxial layer in the substrate, forming a first silicon layer on the silicon germanium epitaxial layer, wherein the first silicon layer is a pure silicon layer, and forming a second silicon layer on the first silicon layer, wherein the second silicon layer comprises a silicon layer doped with boron atoms, wherein the boron-doped silicon layer does not comprise germanium.

Growing community of inventors

Shamen, China

Yong Xie