Cheil Industries Inc.

Samsung Sdi Co., Inc.

Yong-Woon Yoon

Chung-Heon Lee

Young-Min Kim

Youn-Jin Cho

Yun-Jun Kim

Joon-Young Moon

You-Jung Park

Hyun-Ji Song

Sung-Jae Lee

Yoo-Jeong Choi

Hea-Jung Kim

Chul-Ho Lee

Seung-Hee Hong

Yu-Shin Park

Yo-Choul Park

Sung-Hwan Kim

Hyo-Young Kwon

Youn-Hee Nam

Go-Un Kim

Seung-Wook Shin

Min-Soo Kim

Sung-Min Kim

Hwan-Sung Cheon

Seulgi Jeong

Songse Yi

Byeri Yoon

Sun-Hae Kang

Jae-Yeol Baek

Naery Yu

Yeon-Hee Jo

Sun-Min Hwang

Won-Jong Hwang

MyeongKoo Kim

A monomer for a hardmask composition is represented by the following Chemical Formula 1, 

Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

A method of producing a layer structure includes forming a first organic layer by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer through a curing process.

Method of producing layer structure, layer structure, and method of forming patterns

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. 

Monomer, hardmask composition comprising monomer, and pattern forming method using hardmask composition

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A', L and n are the same as in the detailed description.

Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition

A monomer for a hardmask composition, a hardmask composition, and a method of forming patterns, the monomer being represented by the following Chemical Formula 1: 

Monomer for hardmask composition, hardmask composition including the monomer, and method of forming patterns using the hardmask composition

A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent, 

Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns

Disclosed are a polymer represented by the Chemical Formula 1, a monomer represented by the Chemical Formula 2, and a solvent, wherein the monomer is included in the same or a higher amount than the polymer, and a method of forming patterns using the same.

Hard mask composition and method for forming pattern using same

Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same.

Monomer, hard mask composition comprising said monomer, and method for forming pattern using said hard mask composition

A hardmask composition and a method of forming patterns, the composition including a solvent; and a polymer including a moiety represented by the following Chemical Formula 1, 

Hardmask composition and method of forming patterns using the hardmask composition

Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern.

Monomer for hardmask composition, hardmask composition including monomer, and pattern forming method using hardmask composition

A composition for a hardmask including copolymer including repeating units represented by Chemical Formulae 1 and 2 and a solvent, a method of forming a pattern using the same, and a semiconductor integrated circuit device including a pattern formed using the method are provided.

Composition for hardmask, method of forming patterns using the same, and semiconductor integrated circuit device including the patterns

Forming a dual damascene structure includes forming a first insulation layer and a second insulation layer, forming a resist mask, forming a via hole down to a lower end of the first insulation layer, forming a hardmask layer in the via hole and on the second insulation layer using a spin-coating method, forming a resist mask, forming a first trench hole down to a lower end of the second insulation layer, respectively removing a part of the hardmask layer in the via hole and a part of the hardmask layer on the second insulation layer, forming a second trench hole by removing a part of the first insulation layer between a top corner of the hardmask layer remaining in the via hole and a bottom corner of the first trench hole, removing the hardmask layer, and filling the via hole and the second trench hole with a conductive material.

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Suwon-si, South Korea

Yong-Woon Yoon