Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Amusetec Co., Ltd.

Yong-Woo Jeon

Young Shin Kim

Chang-jung Kim

I-hun Song

Seung-eon Ahn

Kwan-young Kim

Jae-hyun Yoo

Jin-Hyun Noh

Sang-hun Jeon

Sung-Sun Park

Chae-hun Lee

Jung-Bae Park

Je-Hun Lee

Sung-Chul Kim

Young Ju Kim

Dae-Hwan Kim

Sang-Hun Jeon

Jae-chul Park

Chong-Du Kim

Bo-Hyun Jung

Woo-Yeol Maeng

Sei-yong Park

Jun-Hyun Park

Kee-Moon Chun

Soo-Ik Jung

Sang-Hyeon Kim

Byung-Du Ahn

Myoung-Hoon Park

Doill Jung

Young-Jun Jung

Jae-Wook Kim

I-Hun Song

Jeong-Seok Park

Jae-Woo Park

Kwang-Su Seo

Ji-Hoon Ahn

Gi-Hoon Kang

Gyu-Bok Lee

Seung-hyup Lee

Byoung-Joo Yi

Joon-Seo Park

Ji-hoon Ahn

Kyung-Mok Yoo

Seung-Eon Ahn

Seung-Hyup Lee

Chang-Jung Kim

An electronic device is provided. The electronic device includes a mounting surface configured to accept another electronic device, a holder recess provided in the mounting surface and configured to hold the other electronic device at certain angles, and a rotatable clip installed in the mounting surface, and configured to control at least one part of the other electronic device, wherein other electronic device is accommodated at one end by the holder recess, and is accommodated at another end by the rotatable clip, such that the other electronic device is combined with the electronic device.

Detachable electronic device

A semiconductor device includes a first well disposed in a substrate and including a first impurity of a first conductivity type, a second well disposed in the substrate, including a second impurity of a second conductivity type different from the first conductivity type, and having first to third portions, and a gate structure formed on the first well and the second well, wherein the second portion is disposed between the first portion and the third portion, the first portion and the third portion are formed deeper than the second portion, and concentration of the second impurity of the first portion and the third portion is greater than concentration of the second impurity of the second portion.

Semiconductor device having a drift region with non-uniform impurity concentration profile

According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin and the second fin. The gate crosses the first fin and the second fin. The first fin includes a first doped area at both sides of the gate. The first doped area is configured to have a first voltage applied thereto. The second fin includes a second doped area at both sides of the gate. The second doped area is configured to have a second voltage applied thereto. The second voltage is different than the first voltage.

Semiconductor device using three dimensional channel

An apparatus for generating an image may include a plurality of scintillator layers configured to convert an incident beam into an optical signal; a plurality of micro cells configured to turn on or off depending on whether or not the micro cells detect the optical signal; a reaction depth determining unit configured to detect a decay pattern of the optical signal, on the basis of on/off signals of the micro cells, and configured to determine a type of the scintillator layers with which the incident beam has reacted; and/or a reading unit configured to decide an occurrence location of the incident beam and then generates a photographed image.

Apparatuses for and methods of generating images

In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and a gate driver configured to provide the light-sensing pixels with a gate voltage and a reset signal that have inverted phases. Each of the light-sensing pixels includes a light sensor transistor configured to sense light and a switch transistor configured to output a light-sensing signal from the light-sensor transistor. The gate driver includes a plurality of gate lines connected to gates of the switch transistors, a plurality of reset lines connected to gates of the light sensor transistors, and a plurality of phase inverters each connected between a corresponding reset line and a gate line. Thus, when a gate voltage is applied to one of the plurality of gate lines, a reset signal with an inversed phase to the gate voltage may be applied to a corresponding reset line.

Light-sensing apparatus, method of driving the light-sensing apparatus, and optical touch screen apparatus including the light-sensing apparatus

A touchscreen apparatus includes pixel rows including pixels configured to display an image, a touch-sensing unit configured to sense a physical touch, light-sensing unit configured to sense incident light, a first sensor gate line configured to provide a first gate signal for activating the light-sensing unit and resetting the touch-sensing unit, a second sensor gate line configured to provide a second gate signal for activating the touch-sensing unit and resetting the light-sensing unit, and a reset circuit configured to provide a common voltage to the pixels based on the operation of at least one of the light-sensing unit and the touch-sensing unit.

Hybrid sensing touchscreen apparatus capable of light touch sensing and physical touch sensing and method of driving the same

A key assembly which is configured to provide improved click feeling to a user and an electronic device having the same are provided. The key assembly includes a key body of elastic materials and contact projections, each of the contact projections which is protruded and formed from the key body and presses a switch device spaced apart from the key body by a gap providing a certain interval, wherein the key body is installed such that a contact surface of each of the contact projections is in contact with and pushed back by a certain distance by a pre-loading force of the switch device.

Key assembly and electronic device having the same

A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gusing a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gand values of an interface state-density-function Dover the entire energy band in the band gap.

Method for calculating parameter values of thin-film transistor and apparatus for performing the method

Optical touch screen apparatuses with remote sensing and touch sensing by using a light sensor transistor including an oxide semiconductor transistor. The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected by a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected each other in series.

Touch sensing and remote sensing optical touch screen apparatuses

A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.

Digital silicon photomultiplier detector cells

A hinge device for a portable terminal that includes a first housing and a second housing is provided. The first and second housings are connected by a hinge device at one end of the first housing, and they rotate so that the front and back faces may be reversed. The hinge device includes a first hinge base combined with one side of an end portion of the first housing, a second hinge base combined with one side of an end portion of the second housing and rotating in opposition to the first hinge base, and an elastic member providing an elastic force in a direction that the first hinge base and the second hinge base are adhered closely to each other. The hinge device facilitates a user's viewing of video, such as DMB video, and contributes to the diversification of the design of the portable terminal.

Hinge device for portable terminal

An apparatus for detachably installing a smart card, such as a Subscriber Identity Module (SIM) card, in a portable terminal is provided. The apparatus includes an opening on the portable terminal, a sliding member slidably coupled to the terminal to move in and out of the opening, and a cover on an end portion of the sliding member to open and close the opening as the sliding member slides. The SIM card is placed on the sliding member to move in and out of the opening through a sliding movement of the sliding member. The apparatus prevent damage to the SIM card when it is detachably installed in the portable terminal through the sliding movement of the sliding member.

Apparatus for detachably installing a smart card in a portable terminal

Disclosed herein is a camera lens module pop-up device for a portable wireless terminal which enables insertion and extraction of a camera lens module into and from the portable wireless terminal in a pop-up manner. The device comprises a terminal housing formed with a lens hole, a camera lens module coupled through the lens hole in such a fashion that it can be inserted into or extracted from the lens hole as it is pushed laterally, and can rotate about a hinge axis thereof when being extracted, a rotation cam unit provided at an end surface of the camera lens module for adjusting or restraining a rotation angle of the camera lens module in a stepwise manner when the camera lens module is extracted from the lens hole, and a lens pop-up module coupled to the camera lens module so as to extend in a hinge axis direction for enabling the camera lens module to be inserted and extracted through the lens hole when the camera lens module is pushed laterally, and for enabling the camera lens module to rotate upon extraction thereof.

Camera lens module pop-up device for portable wireless terminal

Growing community of inventors

Seoul, South Korea

Yong-Woo Jeon