Samsung Electronics Co., Ltd.

Snur & Db Foundation

The Government of the United States of America As Represented by the Secretary of the Deptartment of Health and Human Services

Sungkyunkwan University

Imperial Innovations Limited

Unist-academy Industry Research Corporation

The United States of America As Represented by the National Institutes of Health (nih)

Yong Wan Jin

Gae Hwang Lee

Kyung Bae Park

Sung Young Yun

Kwang Hee Lee

Dong-Seok Leem

Chul Joon Heo

Takkyun Ro

Seon-Jeong Lim

Moon Gyu Han

Tadao Yagi

Yeong Suk Choi

Kyu Sik Kim

Xavier Bulliard

Sung Jun Park

Hyesung Choi

Taejin Choi

Hiromasa Shibuya

Katsunori Shibata

Ryuichi Satoh

Chui Joon Heo

Ohkyu Kwon

Eun Joo Jang

Shin Ae Jun

Jeong Il Park

Seong Jae Choi

Hyung Kun Kim

Dongseon Lee

Youn Hee Lim

Kiyohiko Tsutsumi

Mi Yang Kim

Bang Lin Lee

Chul Baik

Norihito Ishii

Rie Sakurai

Jisoo Shin

Sakurai Rie

Chuljoon Heo

Sangmo Kim

Deukseok Chung

Jong Won Chung

Sang Mo Kim

Jong Won Choi

Sungyoung Yun

Hyerim Hong

Sang Yoon Lee

Eun Kyung Lee

Sangyoon Lee

Dae-Ho Kim

Do Hwan Kim

Tae Yon Lee

Feifei Fang

Ji Soo Shin

Jang-Joo Kim

Satoh Ryuichi

Kyusik Kim

Chil Hee Chung

Chul-Joon Heo

Yagi Tadao

Sungdong Suh

Zhenan Bao

Joo-Young Kim

Takashi Okazaki

Martin Heeney

Kyung-bae Park

Young Gu Jin

Kyoung Seok Son

Bon Won Koo

Woong Il Choi

Ji Young Jung

Christopher J Bettinger

Mineki Taoka

Kwang-hee Lee

Masaru Ishii

Don-Wook Lee

Hyun Bum Kang

Sang Chul Sul

Do-hwan Kim

Bulliard Xavier

Hye Yeon Yang

Hye Rim Hong

Ji Youl Lee

Sung Dong Suh

Satoko Ishibe

Younhee Lim

Chui Baik

Kyungbae Park

Tatsuya Imase

Ji-Seon Kim

Yujin Ahn

Brett Baatz

Minwon Suh

Yang Han

Hye Sung Choi

Sangyeon Pak

Jiwon Son

SeungNam Cha

Chang Duk Yang

Gyeongsik Kim

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and/or an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Compound and photoelectric device, image sensor, and electronic device including the same

A transparent conductive film includes a metal chalcogenide compound doped with a halogen and having a sheet resistance at room temperature of less than or equal to about 60 ohm/sq.

Transparent conductive film, method of manufacturing same, thin film transistor, and device including same

An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

Image sensors and electronic devices

A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λ) of the first photoelectric conversion layer and a peak absorption wavelength (λ) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Photoelectric devices and image sensors and electronic devices

An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.

Squarylium compounds and infrared cut films, infrared cut filters and electronic devices including the same

An organic sensor includes a first electrode, a second electrode, an organic active layer between the first electrode and the second electrode, and a protective layer between the organic active layer and the second electrode. Capacitance provided of the first electrode, the protective layer, and the second electrode is less than or equal to about 2&#xd7;10F.

Organic sensors and electronic devices

A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.

Organic image sensors without color filters

Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor, an n-type semiconductor, and an n-type dopant represented by Chemical Formula 1, and an image sensor and an electronic device including the same. Definitions of Chemical Formula 1 are the same as defined in the detailed description.

Organic photoelectric device, image sensor, and electronic device

An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.

Visible light sensor embedded organic light emitting diode display panels and display devices including the same

Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.

Non-invasive biometric sensor based on organic photodetector

An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p/n) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p/n) and the second composition ratio (p/n).

Organic photoelectronic device and image sensor

A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.

Fingerprint sensors and fingerprint sensor arrays and devices

Growing community of inventors

Seoul, South Korea

Yong Wan Jin