Samsung Electronics Co., Ltd.

Yong Uk Lee

Ajeong Choi

Suk Gyu Hahm

Jeong Il Park

Youngjun Yun

Won Bin Hong

Joon-Young Choi

Chul Baik

Byung Ha Park

Dong Hyun Sohn

Nak Hyun Kim

Eung Yeoul Yoon

Joo Young Kim

Jong Won Chung

Chui Baik

Jeong Ii Park

Joon Young Choi

A display panel includes a switching transistor and a light-emitting transistor. The switching transistor includes a first gate electrode, a first source electrode, a first active layer, and a first drain electrode. The light-emitting transistor includes a second gate electrode, a second source electrode, a second active layer, a light-emitting layer, and a second drain electrode. The second gate electrode is the first drain electrode of the switching transistor. The switching transistor and the light-emitting transistor may be on a substrate. The switching transistor, the second source electrode, the second active layer, the light-emitting layer, and the second drain electrode are stacked in a direction perpendicular to the surface of the substrate.

Display panels and display devices

A display module configured to improve transmission and reception performance of an electronic device includes: a first panel; a second panel disposed to be opposite to the first panel; and an antenna layer disposed between the first panel and the second panel, and comprising a resin layer formed by an imprinting method, wherein the resin layer includes: an engraved pattern formed in one surface; and an ink layer formed with a conductive material filled in the engraved pattern.

Display module and method of manufacturing the same

A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.

Thin film transistor including a pair of auxiliary structures corresponding to source/drain and method of manufacturing the same

Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.

Thin film transistor and method of manufacturing the same

A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.

Thin film transistor, making method thereof, and electronic device comprising thereof

Growing community of inventors

Gwangju-si, South Korea

Yong Uk Lee