Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Seoul National University

Yong-Uk Lee

Bo-Sung Kim

Mun-Pyo Hong

Joon-hak Oh

Mun-pyo Hong

Keun-Kyu Song

Min-Seong Ryu

Seung-Hwan Cho

Young-Min Kim

Tae-Young Choi

Bo Sung Kim

Soo-Jin Kim

Woo-Jae Lee

Joon-Hak Oh

Jong-In Hong

Min-Ho Yoon

Jong-Hyun Seo

Kyuha Chung

Do-Yeung Yoon

Gia Kim

The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display.

Thin film transistor array panel using organic semiconductor and a method for manufacturing the same

According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

Display device and manufacturing method thereof

An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a data line disposed on the substrate; an insulating layer disposed on the data line and having a contact hole exposing the data line; a first electrode disposed on the insulating layer and connected to the data line through the contact hole; a second electrode disposed on the insulating layer; an organic semiconductor disposed on the first and the second electrodes; a gate insulator disposed on the organic semiconductor; and a gate electrode disposed on the gate insulator.

Organic thin film transistor array panel and manufacturing method thereof

An organic thin film transistor array panel includes; a substrate, a data line formed on the substrate, a gate line intersecting the data line and including a gate electrode, a first interlayer insulating layer formed on the gate line and the data line and including a first opening exposing the gate electrode, a gate insulator formed in the first opening, a source electrode disposed on the gate insulator and connected to the data line, a pixel electrode disposed on the gate insulator and including a drain electrode opposing the source electrode, a insulating bank formed on the source electrode and the drain electrode, the insulating bank defining a second opening which exposes portions of the source electrode and the drain electrode, and an organic semiconductor formed in the second opening.

Organic thin film transistor array panel and method for manufacturing the same

A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

Thin film transistor substrate and method for fabricating the same

An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.

Organic thin film transistor array and manufacturing method thereof

Organic thin film transistor array panel

The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.

Thin film transistor substrate and method of making the same

An electrophoretic display having a pair of substrates separated by a microcapsule layer, a plurality of pixels formed at the intersections of rows of gate lines and columns of data lines on at least one of the substrates, wherein at least one of said substrates is sufficiently flexible when touched to change the separation between said substrates at any of said pixels, a plurality of sense signal lines formed parallel to the data lines, and a sense signal processing unit connected with the sense signal lines for sensing a change in capacitance between said substrates at any of said pixel.

Electrophoretic indication display

An inkjet printing system according to an exemplary embodiment of the present invention includes an inkjet printing chamber depositing ink on a substrate, and a drying chamber spaced from inkjet printing chamber by a predetermined interval and drying the ink by regulating a vapor pressure of a solvent of the ink deposited on substrate. The drying chamber is provided separately, and the vapor pressure of the solvent within the drying chamber is regulated, so that the drying speed of the ink is regulated so as to improve the crystallinity of the organic semiconductor.

Inkjet printing system for manufacturing thin film transistor array

A display device includes an insulation substrate, a source electrode and a drain electrode disposed on the insulation substrate and distanced from each other and including a channel area interposed therebetween, a wall exposing portions of the source electrode and the drain electrode, and defining an opening area surrounding the channel area, and an organic semiconductor layer covering the channel area, and comprising a first sub layer and a second sub layer having different grain sizes.

The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.

Flat panel display and manufacturing method of flat panel display

A liquid crystal display includes a data line and a gate line including a gate electrode on a first substrate, a first partition on the gate and data lines and including a first opening exposing the gate electrode, a gate insulator in the first opening, a source electrode on the gate insulator, a pixel electrode including a drain electrode facing the source electrode and on the gate insulator, a second partition on the source and pixel electrodes and including a second opening exposing portions of the source and drain electrodes, an organic semiconductor in the second opening, a second substrate facing the first substrate and a liquid crystal layer between the first and second substrates and having a same thickness as the second partition.

Liquid crystal display comprising a semiconductor formed in an opening of a partition formed on a source electrode and a drain electrode and method of manufacturing thereof

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Seongnam-si, South Korea

Yong-Uk Lee