Electronics and Telecommunications Research Institute

Yong-Tak Lee

Kyung-Ho Lee

Kyoung-Ik Cho

Kwang-Ryong Oh

A method of manufacturing a GaAs field effect transistor comprises depositing a silicon thin film 202 on a semi-insulating semiconductor substrate 201, forming a first sensitive film 203 by a photolithography to define channel areas and ion-implanting n-type dopants into the substrate to form an activation layer, removing the first sensitive film, forming a second sensitive film 203a on the silicon thin film by photolithography to define an ohmic contact area and then forming a highly doped impurity layer on the side of the activation layer by way of an ion-implantation process, depositing a passivation film 206 over the entire surface of the substrate 201 after the removal of the sensitive film, and effecting an annealing or heat treatment, forming a third sensitive film of a predetermined pattern by using an ohmic contact forming mask, effecting a recess etching process to the surface of the substrate and forming an ohmic contact on the etched portion, and patterning a gate region by using the gate forming mask, recess-etching the surface of the substrate and depositing a low resistivity metal to form a gate.

Method of manufacturing GaAs metal semiconductor field effect transistor

The present invention relates to an integrated photoelectric receiving device in which a PIN-type photodetector and a junction field effect transistor (FET) are integrated in a single chip. The photoelectric receiving device comprises a photodetector having a n-channel layer, an etching stopper layer and an absorption layer formed on a semi-dielectric substrate, the n-channel layer, the etching stopper layer and the absorption layer being formed in a reverse mesa shape and the substrate being etched by a predetermined depth; a transistor having a n-channel layer, an etching stopper layer and a p-type InP layer sequentially formed on the non-etched portion of the semi-insulator substrate, the p-type InP layer having an absorption layer formed thereon in a reversedmesa shape. Also, the invention contemplates a method of manufacturing the device.

Growing community of inventors

Daejeon, South Korea

Yong-Tak Lee