Samsung Electronics Co., Ltd.

Yong-tae Oh

Jae-Hee Oh

Sung-Ho Eun

Jung-In Kim

Jae-Hyun Park

Seung-Pil Ko

Jun-hyok Kong

Semiconductor memory devices having strapping contacts are provided, the devices include cell regions and strapping regions between adjacent cell regions in a first direction. Active patterns, extending in the first direction throughout the cell regions and strapping regions, are spaced apart from one another in a second direction intersecting the first direction. First interconnection lines, extending in the first direction throughout the cell regions and strapping regions, are spaced apart from one another in the second direction while overlapping with the active patterns. Second interconnection lines, extending in the second direction, intersect the active patterns and first interconnection lines in the cell regions. The second interconnection lines are spaced apart from one another in the first direction. Memory cells are positioned at intersection portions of the first and second interconnection lines in the cell regions. The active patterns contact the first interconnection lines through strapping contacts in the strapping regions.

Semiconductor memory devices having strapping contacts

A method of fabricating a semiconductor device includes forming a conductive layer on a semiconductor substrate, forming an insulating layer on the conductive layer, forming a word line and isolation trenches by patterning the insulating layer and the conductive layer, forming an isolation layer that fills the isolation trenches, forming a cell contact hole in the insulating layer such that the cell contact hole is self-aligned with the word line and exposes the word line, and forming a cell diode in the cell contact hole.

Methods of fabricating a semiconductor device including a self-aligned cell diode

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Seoul, South Korea

Yong-tae Oh