Lg Innotek Co., Ltd.

Lg Electronics Inc.

Other

Electronics and Telecommunications Research Institute

Industry-university Cooperation Foundation Hanyang University

Soongsil University

Tamura Corporation

Koha Co., Ltd.

Yong Tae Moon

Sung Hoon Jung

Dae Seob Han

Jeong Sik Lee

Kwang Sun Baek

A Ra Cho

Sang Youl Lee

Ji Hyung Moon

Jun Ho Jang

Yong Seon Song

Hyun Chul Lim

Seoung Hwan Park

Sun Kyung Kim

Dong Joon Kim

Seong Ju Park

Sun Woo Park

Dong-Uk Sim

Chung Song Kim

Young Jun Chong

Rak Jun Choi

Sang Jun Lee

Jung Hun Jang

Jong Hak Won

Jong-In Shim

Ho Ki Kwon

Jeong Soon Yim

Hyeon Min Cho

Jeong Tak Oh

Joong Seo Park

Ha Jong Bong

Chunli Liu

Hyeon Seok Jang

Keun Man Song

In an embodiment, disclosed is a semiconductor device comprising: a semiconductor structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer; and a second electrode which is electrically connected to the second conductive semiconductor layer, wherein an area ratio between an area of an upper surface of the second conductive semiconductor layer and an area of an outer surface of the active layer is 1:0.0005 to 1:0.01.

Semiconductor device

Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.

Semiconductor module and display device including same

A light-emitting device and a lighting system includes a first conductivity type semiconductor layer, a gallium nitride-based super lattice layer on the first conductivity type semiconductor layer, an active layer, on the gallium nitride-based super lattice layer, a second conductivity type gallium nitride-based layer on the active layer, and a second conductivity type semiconductor layer, on the second conductivity type gallium nitride-based layer. The second conductivity type gallium nitride-based layer can include a second conductivity type AlGaN/AlGaN, such as AlGaN/AlGaN, on the active layer.

Light-emitting device

A light emitting device may include a first conductive type semiconductor layer, an active layer including a quantum well and a quantum wall on the first conductive type semiconductor layer, an undoped last barrier layer on the active layer; an AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1)-based layer on the undoped last barrier layer; and a second conductive type semiconductor layer on the AlInGaN-based layer. The undoped last barrier layer may be provided between the AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1)-based layer and a last quantum well which is closest to the second conductive type semiconductor layer among the quantum well and may include a first InGaN (0&#x3c;p1&#x3c;1) layer, an AlInGaN (0&#x3c;q1, q2&#x3c;1) layer on the first InGaN layer, and a second InGaN (0&#x3c;p2&#x3c;1) layer on the AlInGaN layer.

Light emitting device and lighting system

The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InAlGaN (0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1) layer having a second concentration and a second conductive AlGaN (0&#x3c;z&#x3c;1) layer having a third concentration on the active layer.

Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.

Light emitting device

Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer; a GaN-based superlattice layeron the first conductive semiconductor layer; an active layeron the GaN-based superlattice layer; and a second conductive semiconductor layeron the active layer, wherein the GaN-based superlattice layerhas a bandgap energy level that varies in a direction from the first conductive semiconductor layerto the active layer

Light emitting element

The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.

Light emitting device and light emitting device package

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers.

Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.

A light emitting device includes a first conductive semiconductor layer (), an active layer () including a quantum well () and a quantum barrier () on the first conductive semiconductor layer (). An undoped last barrier layer () is provided on the active layer (), and an AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1)-based layer () is provided on the undoped last barrier layer (). A second conductive semiconductor layer () is provided on the AlInGaN-based layer ().

Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.

Light emitting device and lighting system having the same

A voltage controlled oscillator includes a split ring resonator (SRR) configured to have meta-material characteristics fabricated on a board, and an energy compensation circuit configured to cause resonant oscillation of the SRR. The energy compensation circuit is fabricated in the form of an integrated circuit.

Voltage controlled oscillator

A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.

Light emitting device, light emitting device package, and lighting system including the same

Disclosed herein is a light emitting device including a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer including at least one combination of a well layer of a first composition formed of a nitride-semiconductor material having first electronic energy and a barrier layer of a second composition formed of a nitride-semiconductor material having higher electronic energy than the first electronic energy, and an interface layer disposed between the second conductivity-type semiconductor layer and the active layer or between the first conductivity-type semiconductor layer and the active layer. The interface layer includes first, second and third layers having different energy bandgaps, the energy bandgaps of the first and second layers are greater than the energy bandgap of the barrier layer, and the energy bandgap of the third layer is less than the energy bandgap of the barrier layer.

Growing community of inventors

Seoul, South Korea

Yong Tae Moon