Samsung Electronics Co., Ltd.

Ajou University Industry-academic Cooperation Foundation

S-printing Solution Co., Ltd.

Konan Technology, Inc.

Yong-sung Kim

Chang-seung Lee

Joo-ho Lee

Tae-ung Jung

Tae-Young Chung

Chang-youl Moon

Tae-young Chung

So-hee Jang

Dong-Hyun Roh

Soo-Ho Shin

Soo-ho Shin

Hee-Seon Park

Hye-Soo Lee

Yong-Seok Jung

Jeo-young Shim

Hyung Ki Choi

Woong-lin Hwang

Woon-bae Kim

Hyung Jin Choi

Sung-Hee Lee

Tae-hoon Kim

Yoon-Hee Choi

Kyu-Dong Jung

Jeong-yub Lee

Jeong-hun Pang

Kyoung-Gu Woo

Seok-Whan Chung

Chan-Wook Baik

Hyun-Jae Song

Xianyu Wenxu

Jae-ho You

Hae-seog Jo

Chang-hwan Choi

Yong-young Park

Jin-woo Lee

Sung-Ho Ryu

Tae-han Jeon

Ho-young Ahn

Jun-seong Kim

Whoi-Yul Kim

Youngkwang Shin

Jong-pil Jun

Eun-Cheol Lee

Woo-young Yang

Sang-chae Kim

Dong-joon Hyun

Myung-Hee Kwon

Chang-Han Lee

Duck-Hoon Kim

Dong-seop Kwon

Hae-seon Park

Tae-Yong Chung

Jao-ho You

Young-Sum Kim

Minwoo Kang

Myeongdong Kim

Jungho Roh

Toner cartridge

A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.

Semiconductor device having vertical channels and method of manufacturing the same

A nanogap device which may include a first insulation layer having a nanopore formed therein, a first channel layer which may be on the first insulation layer, a first source electrode and a first drain electrode which may be respectively in contact with both ends of the first channel layer, a second insulation layer which may cover the first channel layer, the first source electrode, and the first drain electrode, and a first nanogap electrode which may be on the second insulation layer and may be divided into two parts with a nanogap, which faces the nanopore, interposed between the two parts.

Nanogap device and method of processing signal from the nanogap device

A developer supplier for delivering a developer in a supply pipe having a multi-curvature structure is provided. The developer supplier includes a rotation shaft including a rigid first rotation shaft. The developer supplier includes a flexible second rotation shaft that has a smaller bending strength than the first rotation shaft, and is connected to the first rotation shaft, and a spiral wing formed around the rotation shaft, and at least a portion of the spiral wing formed around the second rotation shaft is flexible.

Developer supplier operable in developer supply pipe and electrophotographic image forming apparatus using the same

Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.

Transistors and methods of manufacturing the same

Graphene transferring members, graphene transferrer, methods of transferring graphene, and methods of fabricating a graphene device, may include a metal thin-film layer pattern and a graphene layer sequentially stacked on an adhesive member. The metal thin-film layer and the graphene layer may have the same shape. After transferring the graphene layer onto a transfer-target substrate during the fabrication of a graphene device, the metal thin-film layer is patterned to form electrodes on respective ends of the graphene layer by removing a portion of the metal thin-film layer.

Graphene-transferring member, graphene transferrer, method of transferring graphene, and methods of fabricating graphene device by using the same

Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.

Graphene transferring methods, device manufacturing method using the same, and substrate structures including graphene

A graphene electronic device includes: a first conductive layer and a semiconductor layer on a first region of an intermediate layer; a second conductive layer on a second region of the intermediate layer; a graphene layer on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure and a second gate structure on the graphene layer.

Graphene electronic devices and methods of manufacturing the same

Electromagnetic wave oscillators each having a multi-tunnel and electromagnetic wave generating apparatuses including the electromagnetic wave oscillators are provided. The electromagnetic wave oscillator includes: a first waveguide which has a folded structure such that a path traveled by an electromagnetic wave through the first waveguide crosses an axial direction a plurality of times; an electron beam tunnel through which an electron beam passes, wherein the electron beam tunnel extends along the axial direction and crosses the first waveguide a plurality of times; and at least one auxiliary tunnel which extends parallel to the electron beam tunnel and which crosses the first waveguide a plurality of times.

Electromagnetic wave oscillator having multi-tunnel and electromagnetic wave generating apparatus including the electromagnetic wave oscillator

A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Methods of transferring graphene and manufacturing device using the same

Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.

A nanogap device includes a first insulation layer having a nanopore formed therein, a first nanogap electrode which may be formed on the first insulation layer and may be divided into two parts with a nanogap interposed between the two parts, the nanogap facing the nanopore, a second insulation layer formed on the first nanogap electrode, a first graphene layer formed on the second insulation layer, a first semiconductor layer formed on the first graphene layer, a first drain electrode formed on the first semiconductor layer, and a first source electrode formed on the first graphene layer such as to be apart from the first semiconductor layer.

A method of manufacturing a graphene device may include forming a device portion including a graphene layer on the first substrate; attaching a second substrate on the device portion of the first substrate; and removing the first substrate. The removing of the first substrate may include etching a sacrificial layer between the first substrate and the graphene layer. After removing the first substrate, a third substrate may be attached on the device portion. After attaching the third substrate, the second substrate may be removed.

Graphene device and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Yong-sung Kim