Optomind Inc.

Theleds Co., Ltd.

Yong Sung Jin

Yung Sung Son

Taeyong Kim

Yong Geon Lee

Jae Hak Lee

An active optical cable is disclosed. According to the present disclosure, there is provided an active optical cable, having no complicated structure by obviating the need for a separate monitoring photodetector as was used for a typical optical transceiver, increasing light output-current linearity to improve optical coupling efficiency, generating a library of transmission/reception-related electro-optical characteristics of both optical modules so as to enable light outputted from a light source included in an optical transmitter to maintain high linearity over a wide range of temperatures, thereby reducing power consumption, and being applicable to a multi-level PAM technique involving at least four (4) levels.

Active optical cable

An active optical cable (AOC) is disclosed. According to the present disclosure, an AOC, when connected to a network equipment, generates, changes or deletes and then transmits new information necessary for the a network equipment to recognize and operate the AOC itself, and thereby enabling a data center provided with the AOC and the network equipment to perform data communication smoothly without failure.

An active optical cable is disclosed. According to the present disclosure, there is provided an active optical cable, characterized by: having no complicated structure by obviating the need for a separate monitoring photodetector as was used for a typical optical transceiver, increasing light output-current linearity to improve optical coupling efficiency, generating a library of transmission/reception-related electro-optical characteristics of both optical modules so as to enable light outputted from a light source included in an optical transmitter to maintain high linearity over a wide range of temperatures, thereby reducing power consumption, and being applicable to a multi-level PAM technique involving at least four (4) levels.

A gallium nitride based compound semiconductor device including a compliant substrate having a reduced stress and a method for manufacturing the same are disclosed. The compliant substrate included in the gallium nitride based compound semiconductor device is manufactured by heating a substrate and a group III metal including at least one of an aluminum, a gallium and an indium, and a chloride based compound generated by introducing a HCl gas to the melted group III metal reacts with a NH3 gas to form a nitride based thin film on the wafer.

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Seoul, South Korea

Yong Sung Jin