Electronics and Telecommunications Research Institute

Yong Sun Yoon

Jong Moon Park

Han Young Yu

Yark Yeon Kim

Won Ick Jang

Bo Woo Kim

Kun Sik Park

Seong Wook Yoo

Sang Gi Kim

Jin Gun Koo

Joon Sung Lee

Bong Kuk Lee

Byung Won Lim

Yoon Kyu Bae

Jin Yeong Kang

Moon Youn Jung

Seon Hee Park

Young Jun Kim

Kyu Ha Baek

Dae Sik Lee

Chang Geun Ahn

In Bok Baek

Kee Soo Nam

Boo Woo Kim

Kun Sik Pakr

Ji Eun Lim

Ju Wook Lee

A plasma generating apparatus according to embodiments of the inventive concept, which provides plasma to a biological material, includes a housing configured to provide an inner space in which plasma is generated, a ground electrode coupled to one side of the housing, a power electrode coupled to the other side of the housing, and a controller configured to control a generation mode of the plasma. The generation mode includes a first mode in which the plasma is provided to the biological material while generating the plasma and a second mode in which the plasma is generated in the housing, and then the generated plasma is provided to the biological material.

Plasma generating apparatus and treatment method using the same

A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

Vibration device including support portion

Provided herein an apparatus for generating plasma, the apparatus including a nozzle array, first electrode, and housing. The nozzle discharges plasma. The first electrode is disposed to surround the nozzle array. The housing is disposed to surround the nozzle array and first electrode. The nozzle includes a plurality of nozzles disposed adjacent to one another and in the form of an array, each nozzle configured to discharge plasma. Therefore, it is possible to generate a large size plasma evenly and stably.

Apparatus for generating plasma

Provided herein is a microwave device using a magnetic material nano wire array and a manufacturing method thereof, the device including a template having a nano hole array filled with a metal magnetic material.

Microwave device using magnetic material nano wire array and manufacturing method thereof

Provided are a photomultiplier and a manufacturing method thereof. The manufacturing method thereof may include forming a mask layer on an active region of a substrate doped with a first conductive type, ion implanting a second conductive type impurity opposite to the first conductive type into the substrate to form a first doped region in the active region under the mask layer and an non-active region exposed from the mask layer, forming a device isolation layer on the non-active region, removing the mask layer, and ion implanting the second conductive type impurity having a concentration higher than that of the first doped region into an upper portion of the first doped region in the active region to form a second doped region shallower than the first doped region.

Photomultiplier and manufacturing method thereof

Disclosed is an optical structure formed in an upper side of a semiconductor photomultiplier having a plurality of microcells. The optical structure includes: a first dielectric body formed in an upper side of a dead area between light receiving areas of the respective microcells and having a cross-sectional structure in which a lower side is wider than an upper side; and a second dielectric body formed in the upper side of the light receiving area of each microcell and having a cross-sectional structure in which a lower side is narrower than an upper side, and a refractive index of the second dielectric body is higher than that of the first dielectric body.

Optical structure of semiconductor photomultiplier and fabrication method thereof

Provided are a silicon photomultiplier and method for fabricating silicon photomultiplier. The silicon photomultiplier includes a first conductive type semiconductor layer; a first conductive type buried layer disposed in a lower portion of the first conductive type semiconductor layer, and having a higher impurity concentration than the first conductive type semiconductor layer; quench resistors spaced from each other and disposed on the first conductive type semiconductor layer; a transparent insulator formed on the first conductive type semiconductor layer, and exposing the quench resistors; second conductive type doped layers disposed under the quench resistors to contact the first conductive type semiconductor layer; and a transparent electrode commonly connected to the quench resistors electrically.

Silicon photomultiplier and method for fabricating the same

Provided is a method of manufacturing a hollow microneedle structure. The method includes coating a hollow core having a predetermined section and being long in a lengthwise direction with a coating solution, and solidifying the coating solution to form a coating layer, depositing a metal seed layer on the coating layer, plating the seed metal layer with a metal to form a plated layer, cutting the hollow core having the plated layer at an inclination angle with respect to the lengthwise direction for form a surface inclination, and removing the hollow core and the coating layer to form a hollow microneedle structure. Thus, the hollow microneedle structure can be manufactured to have such diameter, length, hardness, and inclination angle as to minimize pain. By use of the hollow core, the microneedle structure can have vertical microneedles with a uniform inner diameter.

Method of manufacturing hollow microneedle structures

A complementary metal-oxide semiconductor (CMOS)-based planar type avalanche photo diode (APD) using a silicon epitaxial layer and a method of manufacturing the APD, the photo diode including: a substrate; a well layer of a first conductivity type formed in the substrate; an avalanche embedded junction formed in the well layer of the first conductivity type by low energy ion implantation; the silicon epitaxial layer formed in the avalanche embedded junction; a doping area of a second conductivity type opposite to the first conductive type, formed from a portion of a surface of the well layer of the first conductivity type in the avalanche embedded junction and forming a p-n junction; positive and negative electrodes formed on the doping area of the second conductivity type and the well layer of the first conductivity type separated from the doping area of the second conductivity type, respectively; and an oxide layer formed on an overall surface excluding a window where the positive and negative electrodes are formed.

CMOS-based planar type silicon avalanche photo diode using silicon epitaxial layer and method of manufacturing the same

A BJT (bipolar junction transistor)-based uncooled IR sensor and a manufacturing method thereof are provided. The BJT-based uncooled IR sensor includes: a substrate; at least one BJT which is formed to be floated apart from the substrate; and a heat absorption layer which is formed on an upper surface of the at least one BJT, wherein the BJT changes an output value according heat absorbed through the heat absorption layer. Accordingly, it is possible to provide a BJT-based uncooled IR sensor capable of being implemented through a CMOS compatible process and obtaining more excellent temperature change detection characteristics.

Bipolar junction transistor-based uncooled infrared sensor and manufacturing method thereof

Provided is a wafer exposure apparatus used in a semiconductor device manufacturing process, the exposure apparatus including: a reflective mirror for reflecting light provided from a light source; an optical path changer for changing a path of the light provided from the reflective mirror; first mirrors installed at both sides of the optical path changer to change the path of the light; second mirrors installed at both sides of a material to change the path of the light; and third mirrors installed at both sides of a mask to enter the light reflected by the first mirrors to the mask and to enter the light passed through the mask into the second mirrors, whereby it is possible to continuously expose one surface, both surfaces or a specific surface of a wafer in a state that the wafer is once aligned.

Exposure apparatus

Provided is a photodetector in which a transparent nonconductive material having an interface charge and a trapped charge is deposited on a semiconductor surface so as to form a depletion region on the surface of the semiconductor, and the depletion region is employed as an optical detecting region, thereby not only improving detection with respect to light having a wavelength of ultraviolet and blue ranges but also filtering light having a wavelength of visible and infrared ranges, and in which a fabricating process thereof is compatible with a universal silicon CMOS process.

Semiconductor photodetector for detecting light having a wavelength in the ultraviolet blue ranges

Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the second photoresist layer and the blocking layer; exposing a predetermined portion of the second photoresist layer to form a head pattern of the T-type gate, and performing a heat treatment process to generate cross linking at a predetermined region of the second photoresist layer except for the head pattern of the T-type gate; performing an exposure process on an entire surface of the resultant structure, and then removing the exposed portion; and forming a metal layer of a predetermined thickness on an entire surface of the resultant structure, and then removing the first photoresist layer, the blocking layer, the predetermined region of the second photoresist layer in which the cross linking are generated, and the metal layer, whereby it is possible to readily perform a compound semiconductor device manufacturing process, and to reduce manufacturing cost by means of the increase of manufacturing yield and the simplification of manufacturing processes.

Method of fabricating T-type gate

The present invention relates to a MOS transistor of semiconductor device and method of manufacturing the same and, in particular, to MOS a transistor of semiconductor device and method of manufacturing the same which can reduce asymmetry of drain current due to bias of drain current, facilitate shallow junction and reduce the area to a minimum by forming a source/drain.

Growing community of inventors

Daejeon, South Korea

Yong Sun Yoon