Applied Materials, Inc.

Yong Sun

Jingmei Liang

Praket Prakash Jha

Jung Chan Lee

Tza-Jing Gung

Mukund Srinivasan

Jinrui Guo

Xin Zhao

Hopil Bae

Shashank Sharma

Paolo Sacchetto

Abhilash J Mayur

Abbas Jamshidi Roudbari

Warren S Rieutort-Louis

Sunggu Kang

Wolfgang R Aderhold

Marc Joseph DeVincentis

Martin Jay Seamons

Mahdi Farrokh Baroughi

Steven E Molesa

DongQing Li

Paul S Drzaic

Tiffany T Moy

Sandeep Chalasani

Francois R Jacob

Zuoqian Wang

Shuchi Sunil Ojha

Jonathan P Mar

Ian D Tracy

Jui-Chih Liao

Jaein Choi

Zhen Zhang

Elmar Gehlen

Izhar Z Ahmed

Anshi Liang

Han-Chieh Chang

An electronic device display may have pixels formed from crystalline semiconductor light-emitting diode dies, organic light-emitting diodes, or other pixel structures. The pixels may be formed on a display panel substrate. A display panel may extend continuously across the display or multiple display panels may be tiled in two dimensions to cover a larger display area. Interconnect substrates may have outwardly facing contacts that are electrically shorted to corresponding inwardly facing contacts such as inwardly facing metal pillars associated with the display panels. The interconnect substrates may be supported by glass layers. Integrated circuits may be embedded in the display panels and/or in the interconnect substrates. A display may have an active area with pixels that includes non-spline pixels in a non-spline display portion located above a straight edge of the display and spline pixel in a spline display portion located above a curved edge of the display.

Electronic devices with borderless displays

A method of post-treating a silicon nitride (SiN)-based dielectric film formed on a surface of a substrate includes positioning a substrate having a silicon nitride (SiN)-based dielectric film formed thereon in a processing chamber, and exposing the silicon nitride (SiN)-based dielectric film to helium-containing high-energy low-dose plasma in the processing chamber. Energy of helium ions in the helium-containing high-energy low-dose plasma is between 1 eV and 3.01 eV, and flux density of the helium ions in the helium-containing high-energy low-dose plasma is between 5×10ions/cm·sec and 1.37×10ions/cm·sec.

Methods of post treating silicon nitride based dielectric films with high energy low dose plasma

A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.

Methods of post treating dielectric films with microwave radiation

Embodiments disclosed herein relate to cluster tools for forming and filling trenches in a substrate with a flowable dielectric material. In one or more embodiments, a cluster tool for processing a substrate contains a load lock chamber, a first vacuum transfer chamber coupled to the load lock chamber, a second vacuum transfer chamber, a cooling station disposed between the first vacuum transfer chamber and the second vacuum transfer chamber, a factory interface coupled to the load lock chamber, a plurality of first processing chambers coupled to the first vacuum transfer chamber, wherein each of the first processing chambers is a deposition chamber capable of performing a flowable layer deposition, and a plurality of second processing chambers coupled to the second vacuum transfer chamber, wherein each of the second processing chambers is a plasma chamber capable of performing a plasma curing process.

Cyclic flowable deposition and high-density plasma treatment processes for high quality gap fill solutions

Implementations disclosed herein relate to methods for forming and filling trenches in a substrate with a flowable dielectric material. In one implementation, the method includes subjecting a substrate having at least one trench to a deposition process to form a flowable layer over a bottom surface and sidewall surfaces of the trench in a bottom-up fashion until the flowable layer reaches a predetermined deposition thickness, subjecting the flowable layer to a first curing process, the first curing process being a UV curing process, subjecting the UV cured flowable layer to a second curing process, the second curing process being a plasma or plasma-assisted process, and performing sequentially and repeatedly the deposition process, the first curing process, and the second curing process until the plasma cured flowable layer fills the trench and reaches a predetermined height over a top surface of the trench.

Methods for depositing and curing a flowable dielectric layer are disclosed herein. Methods can include forming a flowable dielectric layer, immersing the flowable dielectric layer in an oxygen-containing gas, purging the chamber and curing the layer with UV radiation. By curing the layer after an oxygen-containing gas pre-soak, the layer can be more completely cured during the UV irradiation.

Flowable film curing penetration depth improvement and stress tuning

Growing community of inventors

San Jose, CA, United States of America

Yong Sun