Samsung Electronics Co., Ltd.

Semes Co., Ltd.

Yong Sun Ko

Sung Yoon Chung

Yoon Ho Son

Jae Uk Shin

Im Soo Park

In Seak Hwang

Sang Jine Park

Young Jin Jang

Tae Heon Kim

Young Hun Lee

Seung Hoon Oh

Gui Su Park

Jin Woo Jung

Mi So Park

Yong Hyun Choi

Dong Ha Kim

Jun Young Choi

Kyu Hwan Chang

Keum Joo Lee

Jun Hyun Lim

Se Ho Cha

Jun Youl Yang

Chang Sup Mun

Sang Hoon Jeong

Tae Jong Choi

Woo Gwan Shim

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a first process treating unit configured to treat a substrate in a single-type method; a second process treating unit configured to treat a substrate in a batch-type method; and a posture changing unit provided between the first process treating unit and the second process treating unit and configured to change a posture of the substrate between a vertical posture and a horizontal posture, and wherein the substrate is loaded to and unloaded from the first process treating unit.

Apparatus for treating substrate and method for treating substrate

The present invention provides a method for treating a substrate. The method for treating a substrate comprises: treating the substrate with liquid; and drying the liquid-treated substrate, and the liquid treatment step includes: a first liquid supply step of supplying a first liquid to an upper surface of the rotating substrate; and a second liquid supply step of supplying a second liquid to an upper surface of the rotating substrate, and in the second liquid supply step, a rotation speed of the substrate is adjusted such that the second liquid supplied on the substrate flows from a central region of the substrate to an edge region of the substrate.

Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.

Semiconductor devices including enlarged contact hole and methods of forming the same

A wet etching system operating method includes providing an etching apparatus having an Netching solution, loading Nbatch substrates into the etching apparatus and performing an Netching process, discharging some of the Netching solution, refilling the etching apparatus with an (N+1)etching solution supplied from a supply apparatus connected to the etching apparatus, and loading (N+1)batch substrates into the etching apparatus and performing an (N+1)etching process, wherein the (N+1)etching solution has a temperature within or higher than a temperature management range of the (N+1)etching process, and wherein the (N+1)etching solution has a concentration within or higher than a concentration management range of the (N+1)etching solution, N being a positive integer.

Operating method for wet etching system and related system

A method of fabricating semiconductor devices includes sequentially forming a gate layer and a mandrel layer on a substrate, forming a first photoresist on the mandrel layer, forming a mandrel pattern by at least partially removing the mandrel layer using the first photoresist as a mask, forming a spacer pattern that comprises a first mandrel spacer located on a side of a first mandrel included in the mandrel pattern and a second mandrel spacer located on the other side of the first mandrel, forming a sacrificial layer that covers the first and second mandrel spacers after removing the mandrel pattern, forming a second photoresist including a bridge pattern overlapping parts of the first and second mandrel spacers on the sacrificial layer; and forming a gate pattern by at least partially removing the gate layer using the first and second mandrel spacers and the second photoresist as a mask.

Methods of fabricating semiconductor devices including support patterns

Semiconductor devices may include a field insulating layer that is on a substrate, a gate structure that is on the substrate and separated from the field insulating layer, a first spacer structure that is on sidewalls and a lower surface of the gate structure and is separated from the field insulating layer, and a second spacer structure that is on a part of an upper surface of the field insulating layer that is overlapped by the gate structure.

Semiconductor devices utilizing spacer structures

A method of cleaning damaged layers and polymer residue on semiconductor devices includes mixing HF and ozone water in a vessel to form a solution of HF and ozone water, and dipping a semiconductor device in the vessel containing the solution of HF and ozone water. Preferably, ozone water is subsequently introduced into the vessel to replace the solution of HF and ozone water in the vessel.

Method for cleaning damaged layers and polymer residue from semiconductor device

Growing community of inventors

Suwon-si, South Korea

Yong Sun Ko