Samsung Electronics Co., Ltd.

Yonsei University

Yong-Suk Choi

Hyok-Ki Kwon

Jeong-Uk Han

Seung-Jin Yang

Yong-Tae Kim

Hee-Seog Jeon

Sung-Taeg Kang

Seung Beom Yoon

Hee Seog Jeon

Bae-Seong Kwon

Bo Young Seo

Seog-Heon Ham

Tea-Kwang Yu

Hyun-Khe Yoo

Chul-Ho Chung

Gun-Hee Han

Min-ho Kwon

Hong-kook Min

Ji-Do Ryu

Jeong-Jin Roh

Jae-Jin Yeo

An electronic device with wireless communication capability including at least one antenna, a detection module, and a setting module. The detection module detects an amount of a current returning from the at least one antenna. The setting module sets at least one user interface corresponding to the detected amount of the current, and when the detected amount of current is below a threshold, abnormal operation is indicated. The amount of current returning can be affected by devices sufficiently close to interfere with the transmissive capabilities.

Electronic device and operating method thereof

In a method of manufacturing a semiconductor device, a split gate structure is formed on a cell region of a substrate including the cell region and a logic region. The logic region has a high voltage region, an ultra high voltage region and a low voltage region, and the split gate structure includes a first gate insulation layer pattern, a floating gate, a tunnel insulation layer pattern and a control gate. A spacer layer is formed on the split gate structure and the substrate. The spacer layer is etched to form a spacer on a sidewall of the split gate structure and a second gate insulation layer pattern on the ultra high voltage region of the substrate. A gate electrode is formed on each of the high voltage region of the substrate, the second gate insulation layer pattern, and the low voltage region of the substrate.

Semiconductor devices and methods of manufacturing the same

A semiconductor device includes an active region in a substrate, first to third gate structures crossing the active region and sequentially arranged parallel to each other, a first doped region in the active region between the first and second gate structures and having a first horizontal width and a first depth, and a second doped region in the active region between the second and third gate structures and having a second horizontal width and a second depth. The second horizontal width is larger than the first horizontal width and the second depth is shallower than the first depth. A distance between the first and second gate structures adjacent to each other is smaller than that between the second and third gate structures adjacent to each other. Related fabrication methods are also described.

Semiconductor devices having asymmetric doped regions and methods of fabricating the same

An image sensor includes a delta-sigma analog-to-digital converter (ADC) including a delta-sigma modulator (DSM) and a voltage adjusting circuit. The DSM is configured to perform delta-sigma modulation on an analog signal from a unit pixel. The delta-sigma ADC is configured to convert the analog signal to a digital signal. The voltage adjusting circuit includes a replica inverter having a same configuration as at least one inverter included in the DSM. The voltage adjusting circuit is configured to adjust a power supply voltage and an input voltage provided to the at least one inverter based on a current flowing in the replica inverter.

Image sensors and image processing systems

A semiconductor device has a first semiconductor layer including a first circuit, a second semiconductor layer disposed on the first semiconductor layer and having a second circuit, and a via extending through portions of the first and second semiconductor layers and by which the first and second circuits are electrically connected. One of the circuits is a logic circuit and the other of the circuits is a memory circuit. The semiconductor device is manufactured by fabricating transistors of the logic and memory circuits on respective substrates, stacking the substrates, and electrically connecting the logic and memory circuits with a via.

Semiconductor device and method of manufacturing the same

According to one embodiment, a semiconductor memory device can be generally characterized as including a gate insulating layer on a semiconductor substrate, a floating gate on the gate insulating layer and a word line disposed on one side of the floating gate. A first side of the floating gate facing the word line may include a projecting portion projecting toward the word line. A tip of the projecting portion may include a corner that extends substantially perpendicularly with respect to a top surface of the semiconductor substrate.

Semiconductor memory devices having a floating gate with a projecting portion and methods of forming semiconductor memory devices having a floating gate with a projecting portion

a nonvolatile memory device Includes an active region defined in a semiconductor substrate and a control gate electrode crossing over the active region. A gate insulating layer is interposed between the control gate electrode and the active reigon. A floating gate is formed in the active region to penetrate the control gate electrode and extend to a predetermined depth into the semiconductor substrate. A tunnel insulating layer is successively interposed between the control gate electrode and the floating gate, and between the semiconductor substrate and the floating gate. The floating gate may be formed after a trench is formed by sequentially etching a control gate conductive layer and the semiconductor substrate, and a tunnel insulating layer is formed on the trench and sidewalls of the control gate conductive layer. The floating gate is formed in the trench to extend into a predetermined depth into the semiconductor substrate.

Nonvolatile memory device and method of fabricating the same

Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.

Split gate non-volatile memory devices and methods of forming the same

A non-volatile memory device includes isolation layers, a cell trench, a floating gate, a common source region and a word line. The isolation layers define an active region of a substrate. The cell trench is formed in the active region. The cell trench extends in a first direction. The floating gate is formed on the active region and in the cell trench. The common source region is formed on the active region adjacent a second side face of the floating gate and extends in a second direction substantially perpendicular to the first direction. The word line is formed on the active region, which is adjacent to a first side face of the floating gate opposite to the second side face, and the isolation layers and in the cell trench. The word line extends in the second direction.

Non-volatile memory device and method of manufacturing the same

A semiconductor flash memory device. The flash memory device includes a floating gate electrode disposed in a recess having slanted sides in a semiconductor substrate. A gate insulation film is interposed between the floating gate electrode and the semiconductor substrate. A control gate electrode is disposed over the floating gate electrode. The floating gate electrode includes projections adjacent to the slanted sides of the recess.

Growing community of inventors

Hwaseong-si, South Korea

Yong-Suk Choi