Cheil Industries Inc.

Samsung Sdi Co., Inc.

Yong Soon Park

Tae Young Lee

Dong Hun Kang

In Kyung Lee

Hyun Soo Roh

Tae Wan Kim

Jung Min Choi

Byoung Ho Choi

Young Chul Jung

Go Un Kim

Yong Sik Yoo

Yong Kuk Kim

Haruki Nojo

Dong Jin Kim

The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.

Organic film CMP slurry composition and polishing method using same

A CMP slurry composition includes metal oxide particles, a diisocyanate compound, and deionized water. The CMP slurry composition is capable of selectively controlling polishing speed of a wafer surface having a convex portion and a concave portion, such that primary polishing and secondary polishing can be performed rapidly while stopping polishing of the nitride layer upon the secondary polishing.

CMP slurry composition and polishing method using the same

A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

Chemical mechanical polishing slurry composition for polishing phase-change memory device and method for polishing phase-change memory device using the same

Growing community of inventors

Uiwang-si, South Korea

Yong Soon Park