Electronics and Telecommunications Research Institute

Yong Soon Baek

Kwang Ryong Oh

Sang Ho Park

Jang Uk Shin

Young Tak Han

Jeong Woo Park

Su Hwan Oh

Jong Hoi Kim

Hyun Sung Ko

Moon Ho Park

Sahng Gi Park

Jong Moo Lee

Sung Bock Kim

Sun Tak Park

Ki Soo Kim

Yong Hwan Kwon

Eun Deok Sim

Jung Ho Song

Hyun Soo Kim

Ki Hwan Kim

Dong Hun Lee

Kyung Hyun Park

Joon Tae Ahn

Oh Kee Kwon

Kang Ho Kim

Jong Sool Jeong

Kwang Seong Choi

Gyung Ock Kim

Sang Pil Han

Jae Sik Sim

Sung Il Kim

Chul Wook Lee

Provided herein are a multi-channel receiver optical sub-assembly and a manufacturing method thereof. The multi-channel receiver optical sub-assembly includes a PLC chip having a first side into which an optical signal is received and a second side from which the received signal is outputted, with an inclined surface formed on the second side of the PLC chip at a preset angle, a PD carrier bonded onto the PLC chip and made of a glass material, and an SI-PD bonded onto the PD carrier, a lens being integrated therein. The PLC chip, the PD carrier, and the SI-PD are passively aligned by at least one alignment mark and then are bonded.

Multi-channel receiver optical sub-assembly and manufacturing method thereof

Provided herein is a semiconductor optical device, including a waveguide including lattices buried therein and having a buried hetero (BH) structure formed in an optical oscillation region in which single mode light is oscillated, a waveguide having a deep ridge structure formed in an optical modulation region, and a passive waveguide formed in a mode transition region interposed between the optical oscillation region and the optical modulation region, formed as a connecting structure of the waveguide having the BH structure extending from the optical oscillation region and the waveguide having the deep ridge structure extending from the optical modulation region, and inducing evanescent optical coupling, wherein a width of the waveguide having the BH structure in the mode transition region is smaller than a width of the waveguide having the deep ridge structure in the optical modulation region.

Semiconductor optical device

Provided herein is an optical module including an optical bench having a first step with a first depth and a second step with a second depth that is smaller than the first depth; a silicon carrier disposed above the first step, and where at least one semiconductor chip is installed; an AWG chip (Arrayed Waveguide Grating chip) secured to the second step, extends up to the first step, and is chip-to-chip bonded with the silicon carrier above the first step; a lens disposed on an upper surface of the optical bench where the first step and the second step are not formed; and a metal package surrounding the optical bench, silicon carrier, AWG chip and lens, wherein at one side of the metal package, a double slit that includes an upper slit and a lower slit are formed, a DC FPCB (Direct Current FPCB) extends from outside towards inside the metal package through the upper slit and is secured to a support formed on an inner surface of the upper slit, and an RF FPCB (Radio Frequency FPCB) extends from outside towards inside the metal package through the lower slit and is secured to an upper portion of the silicon carrier, and the upper slit and the lower slit of the double slit being sealed by an elastic epoxy.

Optical module

Provided is an optical transceiver module of an optical transceiver, which is used for optical communications. The optical transceiver module prevents electrical crosstalk between a light source and a light receiver. Additionally, the optical transceiver module includes an optical transceiver unit including a light source and a light receiver together integrated into a substrate, a circuit unit including a drive circuit driving the light source and a detect circuit reading a signal of the light receiver, and a crosstalk prevention unit connected between the substrate and ground to prevent electrical crosstalk between the light source and the light receiver.

Optical transceiver module

Provided is a wavelength division multiplexer/demultiplexer having a flat wavelength response. In the wavelength division multiplexer/demultiplexer, a modified taper-shaped optical waveguide is interposed between an input waveguide and a first slab waveguide, such that the distribution of an optical signal input to an Arrayed Waveguide Grating (AWG) has a sinc-function shape. Thus, a flat wavelength response can be obtained in an output waveguide. In addition, the modified taper-shaped optical waveguide interposed to obtain a flat wavelength response has a small size and a simple structure, and thus can be applied to a conventional wavelength division multiplexer/demultiplexer without a design change.

Wavelength division multiplexer/demultiplexer having flat wavelength response

Provided is a bi-directional optical module including: a transmission optical element including an SOA (semiconductor optical amplifier) aligned on an optical axis of an LD (laser diode) formed on a substrate; and a reception optical element comprising a PD (photodiode) including a light receiving surface perpendicular to the optical axis of the LD of the transmission optical element.

Bi-directional optical module

A 1.55 &#x3bc;m SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other.

Superluminescent diode and method of manufacturing the same

A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.

System and method for switching channels using tunable laser diodes

Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.

Buried ridge waveguide laser diode

Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

Method of fabricating semiconductor optical device

A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is formed on the lower light guide layer. The upper light guide layer is formed on the light absorption layer, and the cladding layer is formed on the upper light guide layer. The lower light guide layer, the light absorption layer, and the upper light guide layer constitute a core layer, which is an optical waveguide, and graded index distribution is symmetrically formed in a depth direction, centering around the light absorption layer having a highest refractive index.

Waveguide PIN photodiode having graded index distribution centering around optical absorption layer

Provided are a temperature-insensitive polymeric optical AWG device and method of manufacturing the same. The temperature-insensitive polymeric optical AWG device includes: polymeric grating channel waveguides interposed between free propagation slab regions on a substrate between the input and output waveguides and having different lengths; a plurality of hollow trenches formed by selectively etching a surface of the substrate under the polymeric grating channel waveguides and allowing the polymeric grating channel waveguides to freely thermally expand from the substrate depending on a temperature variation; and a shield layer shielding entrances of the hollow trenches so that the polymeric grating channel waveguides do not flow into the hollow trenches.

Temperature-insensitive polymeric optical AWG device and manufacturing method therefor

Provided is a waveguide photodetector including: a first clad layer disposed on a substrate; a core layer disposed on the first clad layer and for absorbing predetermined light; a second clad layer disposed on the core layer; and at least one subsidiary layer inserted in the first clad layer and the second clad layer. In this structure, the photodetector has about the same spot size as that of an optical fiber or planar lightwave circuit (PLC), so that incident light can be absorbed without loss, and the photodetector can more efficiently combine with the optical fiber or PLC and operate even at high power.

Growing community of inventors

Daejeon, South Korea

Yong Soon Baek