Samsung Electronics Co., Ltd.

Yong-Sik Park

Sang-Hoon Shin

Pyung-moon Zhang

Ki-hyun Park

Seung-ho Ok

Sang-Jin Lee

Chan-Kyung Kim

Sung-Ho Park

Hyun-Sung Shin

A memory device includes a memory cell array formed in a semiconductor die, the memory cell array including a plurality of memory cells to store data and a calculation circuit formed in the semiconductor die. The calculation circuit performs calculations based on broadcast data and internal data and omits the calculations with respect to invalid data and performs the calculations with respect to valid data based on index data in a skip calculation mode, where the broadcast data are provided from outside the semiconductor die, the internal data are read from the memory cell array, and the index data indicates whether the internal data are the valid data or the invalid data. Power consumption is reduced by omitting the calculations and the read operation with respect to the invalid data through the skip calculation mode based on the index data.

Memory device supporting skip calculation mode and method of operating the same

A built-in self-test (BIST) circuit and a method of operating BIST circuit is disclosed. The BIST circuit is configured to generate a test pattern based on a plurality of test parameters including a first test parameter and a second test parameter and perform a test on at least one memory core. The method includes setting a sweep range comprising a sweep start point of the first test parameter and a sweep end point thereof; generating a first test pattern corresponding to each sweep point of the sweep range from the sweep start point of the first test parameter and the sweep end point thereof and providing the first test pattern to the at least one memory core; receiving output data corresponding to the first test pattern from the at least one memory core and comparing the output data and a predetermined reference data; and generating first test result information based on results of the comparing.

Built-in self-test (BIST) circuit, memory device including the same, and method of operating the BIST circuit

A built-in self-test (BIST) circuit and a method of operating BIST circuit is disclosed. The BIST circuit is configured to generate a test pattern based on a plurality of test parameters and perform a test on at least one memory core. The method includes setting a sweep range including a sweep start point of a first test parameter and a sweep end point thereof; generating a first test pattern corresponding to each sweep point of the sweep range from the sweep start point of the first test parameter and the sweep end point thereof and providing the first test pattern to the at least one memory core; receiving output data corresponding to the first test pattern from the at least one memory core and comparing the output data and a predetermined reference data; and generating first test result information based on results of the comparing.

An optical disk is provided including a read only memory region formed on one surface of the optical disk and recorded with information, a non-volatile memory formed on the other surface of the optical disk opposite to the surface formed with the read only memory region, a mark formed on the surface of the optical disk where the non-volatile memory is formed, and one or more dummy memories arranged on the optical disk in such a manner that the center of weight of the optical disk is positioned at the center of the optical disk. Also, provided is an optical disk unit adapted to use the optical disk, which includes a non-volatile memory pickup unit for reading data recorded on the non-volatile memory of the optical disk and writing data onto the non-volatile memory. The optical disk unit is controlled by applying a write or read command to the non-volatile memory, sensing the mark on the optical disk, stopping the optical disk, electrically connecting the pickup to the non-volatile memory, executing a data reading or writing operation for the non-volatile memory, and electrically disconnecting the pickup from the non-volatile memory. Additionally, there is further provided an optical disk unit for a cartridge type optical disk, with at least one non-volatile memory formed on one surface of the cartridge.

Growing community of inventors

Anyang-si, South Korea

Yong-Sik Park