Electronics and Telecommunications Research Institute

Yong Sik Lim

Gyungock Kim

Seong Hyun Kim

Kwang Yong Kang

Doo Hyeb Youn

Hyun Tak Kim

Byung Gyu Chae

Sunglyul Maeng

Sungyul Maeng

Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material

A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

Current-jump-control circuit including abrupt metal-insulator phase transition device

Growing community of inventors

Chungcheongbuk-do, South Korea

Yong Sik Lim