Samsung Electronics Co., Ltd.

Yong-seung Kim

Dong-Suk Shin

Dong-Woo Kim

Kwan-heum Lee

Hyun-ho Noh

Yu-yeong Jo

Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8&#xd7;10/cmor more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7&#xb0; with a top surface of the fin structure.

Growing community of inventors

Hwaseong-si, South Korea

Yong-seung Kim