Skhynix Inc.

Hynix Semiconductor Inc.

Yong-Seok Eun

Mi-Ri Lee

Kyong-Bong Rouh

Min-Soo Kim

Eun-Shil Park

Su-Ho Kim

Tae-Han Kim

Shang-Koon Na

Kwon Hong

Tae-Yoon Kim

Kee-Jeung Lee

Sung-Jin Whang

Seung-Woo Shin

Moon-Sig Joo

Bo-Min Seo

Kyoung-Eun Chang

A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same

A transistor including a recessed gate structure having improved doping characteristics and a method for forming such a transistor. The transistor includes a recess in a semiconductor substrate, where the recess is filled with a recessed gate structure including an impurity doped layer and a layer doped with a capture species. The capture species accumulates the impurity and diffuses the impurity to other layers of the recessed gate structure.

Transistor with recess gate and method for fabricating the same

A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.

Method for fabricating semiconductor device

A semiconductor device with reduced resistance of a buried bit line, and a method for fabricating the same. The method for fabricating a semiconductor device includes etching a semiconductor substrate to form a plurality of active regions which are separated from one another by trenches formed in between, forming a side contact on a sidewall of each active region, and forming metal bit lines, each filling a portion of a respective trench and connected to the side contact.

Semiconductor device with buried bit lines interconnected to one-side-contact and fabrication method thereof

A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming a plurality of buried bit lines in the first trenches, forming a plurality of second trenches to expose at least one sidewall of the buried bit lines by etching the substrate, and forming a plurality of one-sidewall contact plugs which fill the second trenches.

Growing community of inventors

Gyeonggi-do, South Korea

Yong-Seok Eun