Lg Innotek Co., Ltd.

Gwangju Institute of Science and Technology

Yong Seok Choi

Kwang Cheol Lee

Jun Seok Park

Seong Ju Park

Seong-Ju Park

Byeong Hyeok Kim

Jang Won Kang

Jang-Won Kang

A semiconductor light emitting device package including a main body including a supporting member and an outside member on the supporting member; at least one semiconductor light emitting device disposed on the supporting member in which the outside member at least partially surrounds the at least one semiconductor light emitting device; first and second electrodes, at least one electrode of the first and second electrodes at least partially extending under the at least one semiconductor light emitting device; a metallic member disposed under the at least one semiconductor light emitting device and extending beyond outside edges of the at least one semiconductor light emitting device; a first molding part surrounded by the outside member and covering the at least one semiconductor light emitting device; and a second molding part disposed on the first molding part, the second molding part formed in a domed shape.

Semiconductor light emitting device package

Disclosed herein are a ZnO film structure and a method of forming the same. Dislocation density of a ZnO film grown through epitaxial lateral overgrowth (ELOG) is minimized. In order to block a chemical reaction between the ZnO film and a mask layer at the time of performing the ELOG, a material of the mask layer is AlF, NaF, SrF, or MgF. Therefore, the chemical reaction between ZnO and the mask layer is blocked and a transfer of dislocation from a substrate is also blocked.

ZnO film structure and method of forming the same

Disclosed herein is a method of forming a p-type zinc oxide thin film. A zinc oxide layer and an antimony oxide layer are alternately stacked one above another on a substrate, forming a superlattice layer. The superlattice layer is modified into a p-type zinc oxide thin film by annealing. Upon annealing, zinc atoms of the zinc oxide layer are diffused into the antimony oxide layer and antimony atoms of the antimony oxide layer are diffused into the zinc oxide layer.

Method of forming p-type ZnO film

Provided are a light emitting device package and a lighting device. The light emitting device package includes a base having a via hole passing through a top surface thereof and a bottom surface thereof, a plurality of electrodes formed on the top surface of the base, the plurality of electrodes being electrically connected to a lower portion of the base through the via hole of the base, a frame disposed on the base, the frame having an opening and a light emitting device electrically connected to at least one of the plurality of electrodes in the opening of the frame. A width of the base is wider than a width of the frame, and material having light reflectivity is disposed on the frame.

Light emitting device package and a lighting unit with base having via hole

Disclosed are a LED package, a method of fabricating the same, and a backlight unit having the same. The light emitting diode package comprises a light emitting diode, a printed circuit board provided with a circuit pattern used for driving the light emitting diode and a through hole formed in an area where the light emitting diode is mounted, and a heat sink provided in the through hole and contacted with a bottom surface of the light emitting diode.

LED package, method of fabricating the same, and backlight unit having the same

Provided are a light emitting device package and a lighting device. The light emitting device package includes a base, a light emitting device on the base, a plurality of electrode pads on the base, the plurality of electrode pads electrically connected to the light emitting device, a frame disposed on the base, wherein a size of the frame is smaller than a size of the base, a silver layer on a portion of the plurality of electrode pads, the silver layer directly contacted with the frame and an optical member covering the light emitting device.

Light emitting device package and a lighting device

A semiconductor light emitting device package according to an embodiment comprising: a package body comprising a groove section; an electrode in the groove section; at least one semiconductor light emitting device electrically connected to the electrode in the groove section of the package body; an interconnection pattern on an outer peripheral surface of the package body and electrically connected to the electrode, wherein a part of the interconnection pattern is on a bottom surface of the package body; and a metal pattern is on the bottom surface of the package body corresponding to an area in which the semiconductor light emitting device is located.

Provided is a light emitting device package. The light emitting device package comprises a base substrate, a frame, and a light emitting device. The base substrate comprises a plurality of electrode pads. The frame is formed of silicon, attached on the base substrate, and has an opening. The light emitting device is electrically connected to the electrode pad in the opening.

Growing community of inventors

Gwangju, South Korea

Yong Seok Choi