Samsung Electronics Co., Ltd.

Yong Seok Ahn

Jay-Bok Choi

Sang Ho Lee

Eun Ah Kim

Ki Seok Lee

Sang Yeon Han

Yoo Sang Hwang

Jin-Hwan Chun

Keun Nam Kim

Sung Hee Han

Seung Uk Han

Su Ji Ahn

Seung Hyung Lee

A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.

Semiconductor device and method of fabricating the same

A semiconductor device includes a substrate having a cell region, a boundary region, a peripheral region sequentially arranged in a first direction, an active pattern extending in the cell region in a second direction forming a first acute angle with respect to the first direction, and a boundary pattern in the cell region and directly adjacent to the boundary region. The boundary pattern includes a first side surface extending in the second direction and a first boundary surface extending in a third direction, which is perpendicular to the first direction, from the first side surface, and the first boundary surface defines a boundary between the cell region and the boundary region.

Memory including boundary cell with active cell pattern

Growing community of inventors

Seoul, South Korea

Yong Seok Ahn