Electronics and Telecommunications Research Institute

Industry-academic Cooperation Foundation, Dankook University

Yong-Seo Koo

Yil Suk Yang

Jongdae Kim

Jimin Oh

Provided are an ESD protection diode and an electronic device including the same. An ESD protection diode and an electronic device including the same according to an embodiment of the inventive concept include first to fifth wells. The first well is connected to a first voltage terminal. The second well is connected to a second voltage terminal. The third well is connected to the input/output terminal. The fourth well is disposed between the first well and the third well, and the fifth well is disposed between the second well and the third well. The first to third wells are N-type wells, and the fourth and fifth wells are P-type wells. The first well includes a first N+ diffusion region and the second well includes a second N+ diffusion region. The fourth well includes a first P+ diffusion region and the fifth well includes a second P+ diffusion region. According to an embodiment of the inventive concept, an internal circuit is protected fro an ESD pulse applied to a plurality of terminals and holding voltage is increased.

ESD protection diode and electronic device including the same

Provided is an error amplifier. The error amplifier includes: an amplifying unit receiving first and second input signals and amplifying a voltage difference between the received first and second input signals; a first voltage generating unit generating first and second driving voltages for driving the amplifying unit; a second voltage generating unit generating first and second body voltages to implement a body biasing method; a cascode current source including first to fourth PMOS transistors to provide a bias current to the amplifying unit and the first voltage generating unit; and an output unit outputting a signal of the voltage difference amplified by the amplifying unit, wherein the first and third PMOS transistors receive the first body voltage through a body terminal and the second and fourth PMOS transistors receive the second body voltage through a body terminal.

Growing community of inventors

Seoul, South Korea

Yong-Seo Koo