Samsung Electronics Co., Ltd.

Yong-Sang Jeong

Tae-Cheol Lee

Jin-Ha Jeong

Sun-hak Lee

Dong-Il Park

Young-Mok Kim

Kyoung-Eun Uhm

Ae-Gyeong Kim

A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.

Semiconductor device

A semiconductor device comprises a recessed trench in a substrate, a gate insulating layer including a first portion and a second portion, the first portion having a first thickness and covering lower portions of sidewalls of the recessed trench and a bottom surface of the recessed trench, and the second portion having a second thickness and covering upper portions of the sidewalls of the recessed trench, the second thickness being greater than the first thickness, a gate electrode filling the recessed trench, a first impurity region having a first concentration and disposed at opposing sides of the gate electrode, and a second impurity region having a second concentration greater than the first concentration and disposed on the first impurity region to correspond to the second portion of the gate insulating layer.

Semiconductor device and method of fabricating the same

Growing community of inventors

Hwaseong-si, South Korea

Yong-Sang Jeong