Massachusetts Institute of Technology

Fsi International, Inc.

Yong-Pil Han

Jeffery W Butterbaugh

Herbert H Sawin

Zhe Zhang

A process for removing a Group I or Group II metal species from a surface of a semiconductor substrate. The process comprises exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface. The invention is further directed to a process for etching oxides from a semiconductor substrate comprising exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface.

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Boston, MA, United States of America

Yong-Pil Han