Asm IP Holding B.v.

Asm Genitech Korea Ltd.

Asm Korea Ltd.

Yong Min Yoo

Seung Woo Choi

Young Jae Kim

Yoon Ki Min

Tae Hee Yoo

Sun Ja Kim

Hyung Sang Park

Wan Gyu Lim

Dong Seok Kang

Jong Wan Choi

Seung Ju Chun

Jong Won Shon

Tae Ho Yoon

Hae Jin Lee

Jung Soo Kim

Jeong Ho Lee

Dae Youn Kim

Young Hoon Kim

Dong Rak Jung

Young-Seok Choi

Jong Su Kim

Hak Joo Lee

Dae-youn Kim

Ki Jong Kim

Hyung Wook Noh

Eun Kee Hong

Pei-Chung Hsiao

Hak Yong Kwon

Choong Man Lee

In Soo Jung

A substrate supporting plate that may prevent deposition on a rear surface of a substrate and may easily unload the substrate. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. An edge portion of a top surface of the substrate mounting portion may be anodized. A central portion of the top surface of the substrate mounting portion may not be anodized.

Substrate supporting plate, thin film deposition apparatus including the same, and thin film deposition method

Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.

Method of depositing silicon oxide films

Provided is a substrate processing method that may prevent the non-uniformity of the thickness of landing pads deposited on each step in a vertical NAND device having a stepped structure. The substrate processing method includes stacking, a plurality of times, a stack structure including an insulating layer and a sacrificial layer and etching the stack structure to form a stepped structure having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface. The method also includes forming a barrier layer on the stepped structure, forming a mask layer on the barrier layer and exposing at least a portion of the barrier layer by etching at least a portion of the mask layer with a first etching solution The method further includes etching the exposed barrier layer with a second etching solution and etching the mask layer with a third etching solution.

Substrate processing method and device manufactured by the same

Provided is a substrate processing method that may prevent the non-uniformity of the thickness of landing pads deposited on each step in the process of selectively depositing a landing pad in a vertical NAND device having a stepped structure. The substrate processing method includes stacking, a plurality of times, a stack structure including an insulating layer and a sacrificial layer and etching the stack structure to form a stepped structure having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface. The method also includes forming a barrier layer on the stepped structure, forming a mask layer on the barrier layer and exposing at least a portion of the barrier layer by etching at least a portion of the mask layer with a first etching solution The method further includes etching the exposed barrier layer with a second etching solution and etching the mask layer with a third etching solution.

A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.

Method of processing a substrate and a device manufactured by using the method

A substrate processing method includes stacking a plurality of stack structures each including an insulating layer and a sacrificial layer, on one another. The method also includes generating a stair structure by etching the stack structures and generating a separation layer on a side surface of the stair structure. The method further includes removing the sacrificial layer and generating conductive word line structures in spaces from which the sacrificial layer is removed. The separation layer is provided between the conductive word line structures.

Substrate processing method and device manufactured using the same

Disclosed are a semiconductor device and a manufacturing method thereof. According to the semiconductor device and the manufacturing method thereof according to exemplary embodiments of the present invention, after the dopant source layer is uniformly deposited on a channel layer of the device with the 3-dimensional vertical structure by the plasma-enhanced atomic layer deposition (PEALD) method, the deposited dopant source layer is heat-treated so that the dopants are diffused into the channel layer to function as charge carriers, thereby preventing the charges in the channel layer from being reduced. According to the exemplary embodiments of the present invention, the diffusion speed and concentration of the dopant may be controlled by forming the barrier layer between the channel layer and the dopant source layer.

Semiconductor device and manufacturing method thereof

Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining ato athat are cycles of a first processing condition to an n-th processing condition so that a value of |T&#x2212;(a&#xd7;G+a&#xd7;G+ . . . +a&#xd7;G)| is less than a minimum value among G, G, . . . , and G, where n is 2 or greater integer, G, . . . , and Grespectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Method of forming thin film

A method of processing a substrate to enable selective doping without a photolithography process is provided. The method includes forming a diffusion barrier on the substrate having a patterned structure using plasma deposition method, removing the diffusion barrier except for part of the diffusion barrier using wet etching, forming a diffusion source layer on the patterned structure and the part of the diffusion barrier, and applying energy to the diffusion source layer.

Method of processing substrate

A semiconductor manufacturing method includes depositing a low-k dielectric layer, forming a trench in the low-k dielectric layer, forming a barrier layer in the trench, filling a metal on the barrier layer, planarizing the metal, and forming a capping layer on the planarized metal, wherein the capping layer includes at least two layers.

Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method

Growing community of inventors

Seoul, South Korea

Yong Min Yoo