Hynix Semiconductor Inc.

Skhynix Inc.

Yong-Mi Kim

Jeong-Hun Lee

Hye-Young Lee

Jeong-Tea Hwang

Sung-Joo Ha

Jeong-Tae Hwang

Yong-Gu Kang

Dong-Wook Jang

A semiconductor device includes an information generation circuit configured to generate first information, an information multiplexing circuit configured to multiplex the first information and second information, and an information driving circuit configured to drive an output pad in response to an output signal of the information multiplexing circuit.

Semiconductor device including driving circuit

A semiconductor memory device includes a pipe latch circuit configured to receive parallel input data and output serial data or set an output terminal of the pipe latch circuit at a predetermined voltage level in response to an enable signal, and a synchronization circuit configured to output an output data of the pipe latch circuit in synchronization with an internal clock.

Semiconductor memory device

A delay locked loop includes a delay adjusting unit configured to delay a first clock signal in outputting a second clock signal phase-locked with the first clock signal and generate a delay control signal in response to the first clock signal and the second clock signal and a variable delay line configured to output a third clock signal by delaying the first clock signal in response to the delay control signal.

Delay locked loop

A filtering circuit includes jitter determination reference control unit configured to determine a jitter determination reference in correspondence to an operation mode and output a control signal in response to the jitter determination reference, and a filtering unit configured to set the jitter determination reference in response to the control signal and determine whether an input signal is maintained during a sample period in response to the set jitter determination reference.

Filtering circuit and semiconductor integrated circuit having the same

A circuit, including a first impedance unit having an impedance value based on a first impedance code and configured to drive a first node coupled with a resistor with a first voltage, a first code generation unit configured to generate the first impedance code so that an impedance value of the first impedance unit and an impedance value of the resistor are at a ratio of X:Y, dummy impedance units that receive the first impedance code and drive a second node with the first voltage, a second impedance unit having an impedance value based on a second impedance code and configured to drive the second node with a second voltage, and a second code generation unit configured to generate the second impedance code so that an overall impedance value of the dummy impedance units and an impedance value of the second impedance unit are at a ratio of X:Y.

Impedance control circuit and integrated circuit chip including the same

A voltage stabilization circuit of a semiconductor memory apparatus includes an operation speed detecting unit configured to detect an operation speed of the semiconductor memory apparatus to generate a detection signal, and a voltage line controlling unit configured to interconnect a first voltage line and a second voltage line in response to the detection signal.

Voltage stabilization circuit and semiconductor memory apparatus using the same

A semiconductor memory apparatus according to the embodiment includes a test mode controller, a first data alignment unit, a decoder, a test executing unit and a second data alignment unit. The test mode controller is configured to generate test enable signals in response to a test mode setting signal and a read command. The first data alignment unit is configured to parallely align first input data that are input in series, generate first alignment data, and transmit it to the first data driver. The decoder is configured to decode the first alignment data in response to the test enable signal and generate the decoding signal. The test executing unit is configured to execute the preset test mode in response to the decoding signal. The second data alignment unit is configured to parallely align second input data, which are input in series, in response to the test enable signal, generate second alignment data, and transmit it to a second data driver.

Semiconductor memory apparatus and method of testing the same

A DLL circuit including a first clock signal dividing block configured to selectively divide a frequency of a reference clock signal according to whether a lock completion signal is enabled, a phase comparing block configured to generate a phase comparison signal by comparing phases of a clock signal transmitted from the first clock signal dividing block with a feedback clock signal, and an operation mode setting block configured to generate the lock completion signal in response to the phase comparison signal is described herein.

DLL circuit

An apparatus for controlling on-die termination of a semiconductor memory includes a detector that generates an ODT control signal for inactivating an on-die termination operation in one of a data read period and a data write period in response to a command signal for testing the on-die termination operation, and a controller that inactivates the on-die termination operation in response to the ODT control signal.

Apparatus for controlling on-die termination of semiconductor memory and methods of controlling the same

A semiconductor memory device according to the present invention can change adjusting timing of ODT operation in convenience and have an optimized ODT timing whether the semiconductor memory device is putted on ether rank of a module. The present invention includes an impedance adjusting unit for adjusting an impedance value of an input pad in response to an impedance selecting signal; an ODT operating control unit for controlling the impedance adjusting unit as generating the impedance selection signal using an decoding signal and an ODT timing signal; a delay adjusting unit for delaying an internal control clock for a predetermined timing to thereby generate the ODT timing signal; and an ODT timing control unit for controlling the delay adjusting unit to decide the value of the predetermined timing according to whether or not the semiconductor memory device is arranged to a first rank or a second rank in a module.

A semiconductor memory device is capable of adjusting effective data period of data. The semiconductor memory device includes a buffering unit for buffering input data, a window adjusting unit, and a transmitting unit. The window adjusting unit is for adjusting a window of the buffered data outputted from the buffering unit in response to plural metal option. The window adjusting unit includes a first driving unit for driving an output node in response to the output signal from the buffering unit and a second driving unit for additionally driving the output node in response to the output signal from the buffering unit. Meanwhile, the transmitting unit delivers output of the window adjusting unit into a core block.

Semiconductor memory device capable of adjusting effective data period

A global signal driving device includes a driving control unit for generating a plurality of driving control signals differently configured according to transmission distances of a global signal to a plurality of banks by decoding a bank address; and a driving unit for adjusting a driving strength for driving the global signal based on the plurality of driving control signals in order to drive the global signal to the plurality of banks.

Global signal driver for individually adjusting driving strength of each memory bank

A data input device of a semiconductor memory device can reduce unnecessary current consumption occurring according to a setting of a bandwidth. The data input device includes: a bandwidth signal input part for receiving a bandwidth signal for setting a data bandwidth to output an internal bandwidth signal; a synchronization control part for generating synchronization signals and restrict-synchronization signals in synchronization with a data strobe signal, an activation of the restrict-synchronization signals being restricted through the internal bandwidth signal; a first data input part for aligning the data in response to the synchronization signals; and a second data input part for aligning the data in response to the restrict-synchronization signal and the internal bandwidth signal.

Growing community of inventors

Gyeonggi-do, South Korea

Yong-Mi Kim