Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Yong-kyun Lee

June-key Lee

Young-soo Park

Jae-young Choi

Jung-hyun Lee

Young-jin Cho

Yo-sep Min

Soon-ho Kim

Eun-Bum Cho

Seon-mi Yoon

Tae-wan Kim

Sang-min Shin

Tae-Wan Kim

Bo-soo Kang

Tae-won Noh

Jong-gul Yoon

Yulia Potapova

A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

Method for forming bismuth titanium silicon oxide thin film

A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a BiSiOsol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

Ferroelectric thin film and device including the same

There is provided a method of preparing nano scale nickel powders by wet reducing process. An embodiment of the method of preparing nickel powders comprises preparing the first solution formed by mixing water and a base, preparing the second solution formed by mixing a polyol and a nickel compound, preparing a mixture by mixing the first solution and the second solution, heating the mixture, and separating the nickel powders generated during heating.

Method of preparing nano scale nickel powders by wet reducing process

Provided are non-magnetic nickel powders and a method for preparing the same. The nickel powders have non-magnetic property and a HCP crystal structure. The method include (a) dispersing nickel powders with a FCC crystal structure in an organic solvent to prepare a starting material dispersion, and (b) heating the starting material dispersion to transform the nickel powders with the FCC crystal structure to the nickel powders with the HCP crystal structure. The nickel powders do not exhibit magnetic agglomeration phenomenon. Therefore, the pastes for inner electrode formation in various electronic devices, which contain the nickel powders of the present invention, can keep the well-dispersed state. Also, inner electrodes made of the nickel powders can have a low impedance value even at high frequency band.

Non-magnetic nickel powders and method for preparing the same

Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film

Ferroelectric thin film and method for forming the same

Provided is a method for preparing non-magnetic nickel powders. The method include (a) heating a mixture including a nickel precursor compound and a polyol to reduce the nickel precursor compound to nickel powders with a face-centered cubic (FCC) crystal structure, and (b) heating the resultant mixture of step (a) to transform at least a portion of the nickel powders with the FCC crystal structure to nickel powders with a hexagonal close packed (HCP) crystal structure.

Method for preparing non-magnetic nickel powders

A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequentially stacked ferroelectric films, and wherein two adjacent ferroelectric films have either different compositions or different composition ratios. Use of a ferroelectric capacitor according to an embodiment of the present invention, it is possible to hold stable polarization states of ferroelectric domains for a long retention time, and thus data written in the ferroelectric capacitor a long time ago can be accurately written, thereby improving the reliability of a ferroelectric random access memory (FRAM).

Ferroelectric capacitor and method for manufacturing the same

A method for manufacturing a ferroelectric thin film using a sol-gel process comprising the steps of dissolving a Pb precursor using a solvent to prepare a Pb solution and stabilizing a Zr precursor and a Ti precursor to prepare a Zr solution and a Ti solution, respectively, mixing the Zr solution and Ti solution, stirring the Ti&mdash;Zr mixed solution with the Pb solution and hydrolyzing to prepare a ferroelectric solution, and forming a ferroelectric thin film on a substrate using the ferroelectric solution.

Manufacturing method for ferroelectric thin film using sol-gel process

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Yongin, South Korea

Yong-kyun Lee