Samsung Electronics Co., Ltd.

Yong-kwon Kim

Kyoo-chul Cho

Sam-jong Choi

Kyung-soo Kim

Tae-soo Kang

Jae-ryong Jung

Sang-Sig Kim

Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions of a selected element from group 4 of the periodic table and having a thermal diffusivity of less than about 0.5 centimeters per second (cm/s) are injected into the first dielectric layer to form a charge storing region in the first dielectric layer with a tunnel dielectric layer under the charge storing region. A metal oxide second dielectric layer is formed on the first dielectric layer, the second dielectric layer. The substrate including the first and second dielectric layers is thermally treated to form a plurality of discrete charge storing nano crystals in the charge storing region and a gate electrode layer is formed on the second dielectric layer. Gate structures for integrated circuit devices and memory cells are also provided.

Integrated circuit device gate structures

Methods of forming integrated circuit device gate structures

Growing community of inventors

Gyeonggi-do, South Korea

Yong-kwon Kim