Hyundai Electronics Industries Co. Ltd.

Yong Ku Baek

Young Jin Park

Jong Choul Kim

Yong Sik Yu

Jung Tae Kim

Hyung C Hah

Hee K Cheon

A metal organic chemical vapor deposition apparatus comprising a source ampule, a liquid micro-pump, a vaporizer equipped with a solvent supply means, and a reactor. A reactant dissolved in a solvent in the source ampule is transferred to the vaporizer by the liquid micro-pump. A sufficient amount of the solvent is additionally fed to the vaporizer by the solvent supply means, concurrently with the transfer, and vaporized along with the reactants. After being vaporized in the vaporizer, the reactant is injected to the reactor by carrier gas and deposited on a semiconductor substrate to form a high dielectric thin film. By virtue of the additional supplied solvent, the recondensation of the reactant in the vaporizer, which is attributed to the separation of the solvent from the reactant, can be prevented in the vaporizer and in the transfer line between the vaporizer and the reactor. In addition, the residues of the reactant, which may result from the separation, can be washed off by providing the solvent through the supply means to the vaporizer.

Metal organic chemical vapor deposition apparatus and deposition method

A thin film deposition apparatus which includes a mesh type radio frequency (RF) electrode plate adapted to form plasma, a baffle guide adapted to prevent the plasma from diffusing at a low pressure, and a control unit adapted to perform control of temperature for preventing a reacting raw material from generating a degraded reaction in a gas injector, thereby enabling formation of a multi-element thin film using a multi-element reacting raw material and formation of a uniform thin film having a high density to obtain micro patterns of highly integrated semiconductor devices.

Thin film deposition apparatus

A ferroelectric thin film superior in coatability, fineness of structure and uniformity of composition, is obtained by a method comprised of inducing ferroelectric reactant materials consisting of plural elements into dissociation by exciting plasma with RF power in order for them to participate in a deposition reaction; setting an optimal process condition in which the ions dissociated from the reactant materials by the excited plasma are subjected to deposition at high temperatures under low pressures; supplying the reactant materials through conduits, a manifold and a shower head to a reactor without deterioration, the manifold collecting the reactant materials, the shower head serving to spray the mixed reactant materials; and depositing a ferroelectric thin film in the reactor while purging residual gas from the conduits.

Method for forming ferroelectric thin film and apparatus therefor

This invention discloses a method of forming a charge-storage electrode of a semiconductor device by forming a platinum film at a side wall and top area of a polysilicon charge-storage electrode, in which the platinum film restrains a leakage current through a high dielectric film at the same time the capacitance can be increased.

Method of forming a charge-storage electrode of semiconductor device

A method for depositing a passivation layer on a semiconductor structure having a high resistance value polysilicon layer formed thereon while maintaining the high resistance value thereof and comprises sequentially depositing a silicon oxide layer and a silicon nitride layer, on a high resistance value polysilicon layer of a partially completed semiconductor structure to form a passivation layer thereover. The passivation layer including the silicon oxide layer and the silicon nitride layer is annealed with oxygen plasma in a chamber. The annealed passivation layer is then heated in the presence of a conditioning gas in the chamber to thereby maintaining the resistance of the high resistance value polysilicon layer.

Growing community of inventors

Kyoungki-do, South Korea

Yong Ku Baek