K. C. Tech Co., Ltd.

Linkflow Co., Ltd

Iucf-hyu

Other

Samsung Display Co., Ltd.

Skhynix Inc.

Yong Kim

Yong Jin Kim

Sung Rae Cho

Seok Min Hong

Jae Hyun Jeon

Jun Se Kim

Un Gyu Paik

Hyun Ku Park

Dae Hyeong Kim

Ji Hoon Shin

Chang Jo Lee

Kwan Yong Lee

Sang Jin Ha

Sung Ryul Cho

Jae Gun Park

Jin Su Park

Dong Hyun Kim

Jea Gun Park

Ho Saeng Kim

Jeong Yun Kim

Ga Hyun No

Suk Min Hong

Un Gyu Park

Myung Won Suh

Ho Seong Kim

Dae Hyung Kim

Kyung Hwan Cho

Joon Ha Hwang

A deposition apparatus includes a shield member having a lattice shape in a plan view, the lattice shape including short side edges extending along a first direction and long side edges extending along a second direction, the short side edges including first and second short side edges, a bracket member including a first bracket member coupled to the first short side edge, and a second bracket member coupled to the second short side edge, a plurality of anode bars extending along the second direction and stably placed on each of the first bracket member and the second bracket member, and a target member covering the plurality of anode bars. An anode bar of the plurality of anode bars protrudes outward beyond at least one of the first bracket member and the second bracket member, and the anode bar is physically separated from the shield member by the bracket member.

Deposition apparatus and deposition method using the same

The present invention relates to a method for a street view service and an apparatus for performing same method. The method for a street view service may comprise: a step in which a street view service server receives a first path image for a first path from a first image processing apparatus; a step in which the street view service server generates first user provision information for the street view service for the first path on the basis of the first path image; and a step in which the street view service server transmits the first user provision information to a user apparatus.

Method for street view service and apparatus for performing same method

Cameras

A semiconductor package may include a first chip stack, a second chip stack, and a third chip stack. The third chip stack may include third semiconductor chips, the third chip stack coupled to both of the first and second chip stacks.

Semiconductor packages including chip stacks

An omnidirectional image capturing method and an apparatus performing the method are provided. An omnidirectional image processing apparatus includes: a plurality of image capturing units configured to generate a plurality of images for generating an omnidirectional image; and a processor configured to process the plurality of images, wherein the plurality of images are generated based on a plurality of image capturing lines of the plurality of image capturing units and the plurality of image capturing lines are imaginary lines vertically penetrating centers of a plurality of lenses included in the plurality of image capturing units, respectively.

Omnidirectional image capturing method and apparatus performing the method

According to an embodiment of the present invention, an unmanned aerial vehicle comprises a body, a plurality of arms provided on a periphery of the body, a propeller provided on each of the plurality of arms and driven by a driving motor, and a gripper provided on a bottom of the body to grip an object. The gripper may include a supporting bar extending downward from the bottom of the body and a head provided at a lower end of the supporting bar to grip the object.

Unmanned aerial vehicle with rotatable gripper

Disclosed are abrasive particles, a method for manufacturing the abrasive particles, and a method for manufacturing a Chemical Mechanical Polishing (CMP) slurry. The method for manufacturing abrasive particles for the CMP slurry includes preparing a raw material precursor, drying the raw material precursor, and calcining the dried raw material precursor using a calcination furnace where a gas atmosphere having relatively less oxygen in comparison with an air atmosphere is created.

Abrasive particles, method of manufacturing the abrasive particles, and method of manufacturing chemical mechanical polishing slurry

Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 &#x3bc;m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Polishing slurry, method of producing same, and method of polishing substrate

Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 &#x3bc;m or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 &#x3bc;m or less, particularly, the STI process.

Slurry for CMP and method of polishing substrate using same

A cooling/heating and power generating device utilizes waste heat from an automobile to produce an auxiliary energy source for driving various accessories such as a cooling/heating apparatus, an electric generator, a super charger and the like. Waste heat is dissipated from the engine by waste gases in an exhaust tube and by a cooling fluid circulating between the engine and a radiator. The inventive cooling/heating and power generating device comprises a heat absorber disposed between the engine and the radiator, a heater mounted on the exhaust tube, and an expansion turbine. A cooling medium is heated in the heat absorber by the cooling fluid of the engine, and in the heater by the waste gases in the exhaust tube. The heated cooling medium drives the expansion turbine thus providing a source of power auxiliary to the engine for driving an electric generator, a super charger, etc. After driving the expansion turbine, the cooling medium is condensed and pumped back to the heat absorber. The cooling medium can also be circulated into a cooling/heating apparatus for cooling or heating the passenger compartment.

Cooling, heating and power generating device using automobile waste heat

Growing community of inventors

Seoul, South Korea

Yong Kim