Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Hyundai Motor Company

Lg Electronics Inc.

Kia Motors Corporation

Korea University Research and Business Foundation

Park Systems Corporation

Other

Samsung Mobile Display Co., Ltd.

The Catholic University of Korea Industry-academic Cooperation Foundation

Ms Autotech Co., Ltd.

Myungshin Industry Co., Ltd.

Industry-university Cooperation Foundation Hanyang University

Koh Young Technology Inc.

Yong Kim

Kyung Hwan Lee

Sung Hwan Won

Kohji Kanamori

Won Tae Kim

Kyung Tae Chae

Satoru Yamada

Seon Uk Lee

Tae Hun Kim

Dae Ho Song

Youngchan Kim

Il Gyu Kim

Hui-Jung Kim

Hae Il Park

Hyun Sup Lee

Kwang Soo Bae

Ju Hwa Ha

Sang-Hun Lee

Young Min Kim

Min Hee Cho

Jae Jun Lee

Seok-Joon Hong

Jae Joong Kwon

Joonyoung Park

Sang Joon Kim

Jun Jin Kong

Sang Yup Lee

Myungshik Kim

Tae Woo Lim

Hae Ju Yun

Chang Soo Park

Kwon Jin Kim

Jun Hee Lim

Dae Ho Lee

Jin Ho Son

Woo Jae Lee

Jee Hoon Han

Seok Han Park

Jeong Woo Park

JeongWoo Park

Sang-il Park

Jong Seong Kim

Young Gwi Park

Byeong-Hee Won

Youngjin Kim

Seong Gyu Kwon

Ki Soo Park

Hyun Cheol Kim

Hyun Mog Park

Su Bin Jung

Dong Chul Shin

You Young Jin

Jeong Ho Lee

Dong Hee Han

Seon-Tae Yoon

Seung Hyun Kim

Yeon Ho Kim

Valeriy Prushinskiy

Keon Kuk

Tae Wook Kang

Kyung Hoon Kim

Eung Sun Kim

Sang Il Kim

Haeil Park

Hyeong Joon Seo

Jae Byung Park

Jaejoong Kwon

Dong Il Bae

Shin Il Choi

Yang Kyeong Kim

Yeun Tae Kim

Dong-Jun Lee

Baek Hee Lee

Kwang Sae Lee

Sung Yong Park

Nam Seok Roh

Seung-jin Baek

Yong Soo Lee

Se Young Jang

Hojae Jung

Jin Baek Kim

Min Ki Nam

Bo Ram Lee

Huijae Kwon

Seung Won Choi

Juhwa Ha

Jae Cheol Park

Dong-min Lee

Junhyuk Woo

Chang Ryong Heo

Jae Sung Bang

Sun Ae Kim

Seung Chan Lee

Ju Seok Lee

Tushar Balasaheb Sandhan

Ji Hye Han

Ji Seong Yang

Ju Heon Yoon

Sung Wook Park

Hong Seok Jun

A display device includes a substrate including a display area including a light emitting area, and a peripheral area surrounding at least a portion of the display area, a first light emitting element disposed in the light emitting area on the substrate and emitting a first light, a light guide layer disposed on the first light emitting element, and transmitting a second light incident from the peripheral area to the display area, a first low refractive layer disposed on the light guide layer and having a refractive index smaller than a refractive index of the light guide layer, a second low refractive layer disposed under the light guide layer and having a refractive index smaller than a refractive index of the light guide layer and a first light control layer disposed on the first low refractive layer and having a first opening exposing the light emitting area.

Anti-peeping display device

A semiconductor memory device includes a cell area and a peripheral area, a base insulating layer including opposed first front and rear surfaces in the cell area, a first semiconductor substrate including opposed second front and rear surfaces in the peripheral area, an active pattern on the first front surface, a first conductive line extending in a first direction on a side of the active pattern, a capacitor structure on the active pattern, a first circuit element on the second front surface, and a second conductive line extending in a second direction intersecting the first direction on the first rear surface and the second rear surface. The active pattern extends in a vertical direction intersecting the first direction and the second direction to electrically connect the second conductive line to the capacitor structure.

Semiconductor memory device and method for fabricating the same

A display device includes: a substrate, a light emitting element which is on the substrate and emits light in a light emitting direction; and a side wall layer including a plurality of light control patterns arranged along the substrate, where the side wall layer is adjacent to the light emitting element in the light emitting direction of the light emitting element. Within the side wall layer which is adjacent to the light emitting element in the light emitting direction, each of the plurality of light control patterns has a certain height, the plurality of light control patterns are arranged along a major surface of the substrate and spaced apart from each other by a certain distance between two adjacent light control patterns of the light control patterns, and a ratio of the height to the distance is greater than about 1.4.

Display device

An optical apparatus includes a lens including a first surface and a plurality of side surfaces, a display device disposed on a first side surface among the plurality of side surfaces of the lens and providing light to the first side surface of the lens, an optical path control device disposed between the first side surface of the lens and the display device and selectively changing an optical path of a virtual image of the display device, and a plurality of reflecting members disposed in the lens and reflecting light of the display device to the first surface.

Optical apparatus

A three-dimensional semiconductor memory device is provided. The semiconductor memory device includes first horizontal conductive lines on a substrate in a first direction, each of the first horizontal conductive lines extending in a second direction different from the first direction, second horizontal conductive lines stacked on the substrate in the first direction, each of the second horizontal conductive lines extending in the second direction, a vertical conductive line between the first horizontal conductive line and the second horizontal conductive line and extending in the first direction, a plurality of first magnetic tunnel junction patterns between the vertical conductive line and each of the first horizontal conductive lines, and a plurality of second magnetic tunnel junction patterns between the vertical conductive lines and each of the second horizontal conductive lines. The first horizontal conductive lines and the second horizontal conductive lines are spaced apart from each other in a third direction.

Semiconductor memory device comprising magnetic tunnel junctions

A semiconductor device includes a lower stack structure that includes a lower word line, an upper stack structure that is on the lower stack structure and includes an upper word line, a decoder that is adjacent to the lower stack structure and the upper stack structure, a signal interconnection that is connected to the decoder, a lower selector that is connected to the signal interconnection and further connected to the lower word line, and an upper selector that is connected to the signal interconnection, isolated from direct contact with the lower selector, and further connected to the upper word line.

Semiconductor devices including upper and lower selectors

An optical device for realizing augmented reality comprises a lens comprising a first surface and side surfaces, a display device disposed on a first side surface among the side surfaces of the lens and displaying a first image in a first area and a second image in a second area, a first reflector disposed in the lens and reflecting the first image incident on the first side surface of the lens to the first surface, a second reflector disposed in the lens and reflecting the second image incident on the first side surface of the lens to the first surface, a first condenser disposed between the lens and the first area of the display device and focusing the first image on the first reflector, and a second condenser disposed between the lens and the second area of the display device and focusing the second image on the second reflector.

Optical device

A semiconductor memory device having improved electrical characteristics is provided. The semiconductor memory device comprises a first semiconductor pattern separated from a substrate in a first direction, a first gate structure extending in the first direction and penetrating the first semiconductor pattern, a first conductive connecting line connected to the first semiconductor pattern and extending in a second direction different from the first direction, and a second conductive connecting line connected to the first semiconductor pattern. The first gate structure is between the first conductive connecting line and the second conductive connecting line, the first gate structure includes a first gate electrode and a first gate insulating film, and the first gate insulating film includes a first charge holding film contacting with the first semiconductor pattern.

Semiconductor memory device

A semiconductor device is provided. The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel to an upper surface of the substrate, a first conductive pattern on one side surface of the first stacked structure, the first conductive pattern extending in a second direction crossing the upper surface of the substrate, and a first ferroelectric layer between the first stacked structure and the first conductive pattern, the first ferroelectric layer extending in the second direction, wherein each of the first semiconductor patterns includes a first impurity region, a first channel region and a second impurity region which are sequentially arranged along the first direction.

Semiconductor device

A semiconductor memory device in which performance and reliability are improved, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line extending in a first direction on a substrate, an interlayer insulation film that includes a cell trench extending in a second direction intersecting the first direction, on the substrate, a first gate electrode and a second gate electrode that are spaced apart from each other in the first direction and each extend in the second direction, inside the cell trench, a channel layer that is inside the cell trench and is electrically connected to the conductive line, on the first gate electrode and the second gate electrode, and a gate insulation layer interposed between the first gate electrode and the channel layer, and between the second gate electrode and the channel layer.

Semiconductor memory devices and methods for fabricating the same

A display device includes a first emitting area and a second emitting area which is spaced apart from the first emitting area, a first electrode facing a second electrode with a liquid crystal layer therebetween, each of the first electrode, the second electrode and the liquid crystal layer corresponding to the first emitting area, a third electrode facing a fourth electrode with a light emitting layer therebetween, each of the third electrode, the fourth electrode and the light emitting layer corresponding to the second emitting area, and the fourth electrode defining an opening in the fourth electrode which corresponds to the first emitting area.

Viewing angle narrowing structure and display device having the same

The display panel includes a display area including a pixel area, and a light blocking area which is adjacent to the pixel area, a first light emitting device which is in the pixel area of the display area and emits a light having a first wavelength range, a second light emitting device which is in the light blocking area of the display area and emits a light having a second wavelength range different from the first wavelength range, and a discoloration layer which is on the second light emitting device and is color-changeable by the light having the second wavelength range, the discoloration layer defining a first opening exposing the pixel area to outside the discoloration layer.

Display panel and electronic device including the same

An optical device including: a display device configured to display an image; and a lens including a plurality of reflectors that reflect the image from the display device to a first surface of the lens, wherein the plurality of reflectors include: a first reflector; and a second reflector having a size different from a size of the first reflector.

A semiconductor device includes a first semiconductor structure including circuit devices and first bonding pads; and a second semiconductor structure connected to the first semiconductor structure, the second semiconductor structure including a base layer; a first memory cell structure including first gate electrodes and first channels penetrating through the first gate electrodes; a second memory cell structure including second gate electrodes and second channels penetrating through the second gate electrodes; bit lines between the first and the second memory cell structures, and electrically connected to the first and second channels in common; first and second conductive layers on the second surface of the base layer; a pad insulating layer having an opening exposing a portion of the second conductive layer; and second bonding pads disposed to correspond to the first bonding pads in a lower portion of the second memory cell structure.

Growing community of inventors

Seoul, South Korea

Yong Kim