Globalfoundries Inc.

Globalfoundries U.S. Inc.

Yong Jun Shi

Haiting Wang

Ruilong Xie

Hong Yu

Yi Qi

Yanping Shen

Hsien-Ching Lo

Wei Hong

Chun Yu Wong

Hui Zhan

Liu Jiang

Xing Zhang

Xiaoming Yang

A semiconductor device is provided, which includes an active region, a first structure, a second gate structure, a first gate dielectric sidewall, a second gate dielectric sidewall, a first air gap region, a second air gap region and a contact structure. The active region is formed over a substrate. The first and second gate structures are formed over the active region and between the first gate structure and the second gate structure are the first gate dielectric sidewall, the first air gap region, the contact structure, the second air gap region and a second gate dielectric sidewall.

Air gap regions of a semiconductor device

One illustrative FinFET device disclosed herein includes a source/drain structure that, when viewed in a cross-section taken through the fin in a direction corresponding to the gate width (GW) direction of the device, comprises a perimeter and a bottom surface. The source/drain structure also has an axial length that extends in a direction corresponding to the gate length (GL) direction of the device. The device also includes a metal silicide material positioned on at least a portion of the perimeter of the source/drain structure for at least a portion of the axial length of the source/drain structure and on at least a portion of the bottom surface of the source/drain structure for at least a portion of the axial length of the source/drain structure.

FinFET device with a wrap-around silicide source/drain contact structure

Growing community of inventors

Clifton Park, NY, United States of America

Yong Jun Shi