Semes Co., Ltd.

Yong Jun Seo

Sang Hyun Son

Dong Ok Ahn

Ji Hoon Jeong

Pil Kyun Heo

Hyun Yoon

Young Dae Chung

Do Yeon Kim

Su Jin Chae

Kuk Saeng Kim

Tae Shin Kim

Jee Young Lee

Jung Suk Goh

Kwang Sup Kim

Young Je Um

Won Geun Kim

Sang Min Ha

Ye Rim Yeon

Do Youn Lim

Yoon Ki Sa

Byeong Geun Kim

Jae Seong Lee

A temperature measuring apparatus with improved accuracy is provided. The temperature measuring apparatus comprises a test substrate having a thermal conductivity, a circuit board layer laminated on the test substrate and including a plurality of through holes exposing a top surface of the test substrate, bonding agent disposed in the plurality of through holes and having a thermal conductivity, and a plurality of sensors disposed on the bonding agent and for measuring a temperature.

Apparatus for temperature measurement and method of processing substrate

Disclosed is an apparatus for precisely monitoring warpage deformation of a substrate. The apparatus includes a sensing unit and a processor. The sensing unit is removably mounted on the substrate and detects information on the warpage deformation of the substrate during a treatment process performed on the substrate. The processor generates warpage state information on the basis of the warpage information detected by the sensing unit.

Apparatus for and method of monitoring warpage of substrate, substrate treatment apparatus, and substrate-type sensor

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

Method and apparatus for etching thin layer

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Hwaseong-si, South Korea

Yong Jun Seo