Dongbu Hitek Co., Ltd.

Dongbu Electronics, Co. Ltd.

Electronics and Telecommunications Research Institute

Yonsei University

Sejong University

Yong Jun Lee

Jae Young Ahn

Won Ho Lee

Ji Hun Cha

Choul Joo Ko

Byoung Sun Lee

Jong Hyun Ahn

Yoo La Hwang

Byung Woon Park

Cheol Soon Lim

The present invention provides a method of performing a position measurement on the basis of a signal from a global navigation satellite system (GNSS). The method includes: receiving initial position information; estimating an initial value of a multipath error through a measurement of the GNSS signal on the basis of the received initial position information; estimating a multipath error from the initial value of the multipath error on the basis of a change in the measurement; removing the estimated multipath error from the measurement of the GNSS signal; and performing the position measurement on the basis of the GNSS measurement from which the multipath error is removed.

Method and apparatus for multipath mitigation in GNSS

The present disclosure discloses a three-dimensional photodetector and a method of manufacturing the same. The three-dimensional photodetector according to an embodiment of the present disclosure includes a base part formed in the center region of the three-dimensional photodetector; a first bending part formed around the base part; at least one branch part connected to the base part through the first bending part; second bending parts formed on the at least one branch part; bonding parts connected to the at least one branch part through the second bending parts; at least one photoresistor formed on the surface of at least one of the base part and the branch parts; and a stretchable substrate to which the bonding parts are attached, wherein the bonding parts are attached to the stretchable substrate so that the base part has a gap in the thickness direction of the stretchable substrate; and the at least one photoresistor is responsible for tracking the traveling direction of light.

Three-dimensional photodetector and method of manufacturing the same

A method for manufacturing a lateral double diffused metal oxide semiconductor (LDMOS) device includes forming an oxide layer on a semiconductor substrate, forming first and second trenches by partially etching the oxide layer and the semiconductor substrate, forming a small trench overlapping with the second trench so that the second trench has a stepped structure, and depositing one or more dielectric layers so that the first trench forms a device isolation layer defining a semiconductor device region and the second trench having a stepped structure forms a drain extension device isolation layer. The breakdown voltage of the LDMOS device may be improved while reducing the on-resistance, thereby improving the operational reliability of the device.

Lateral double diffused metal oxide semiconductor (LDMOS) device and method of manufacturing LDMOS device

A method of manufacturing a non-volatile memory device includes the steps of: defining an active region on a semiconductor substrate; forming a charge storage layer on the active region; forming a first conductive pattern on the charge storage layer, wherein the first conductive pattern has a bottom portion larger in width than a top portion thereof, the first conductive pattern further having a sloping sidewall connecting the top and bottom portions; forming an oxide layer on the sidewall of the first conductive pattern; forming a conformal second conductive layer on the first conductive pattern and on the active region around the first conductive pattern; and patterning the first conductive pattern and the second conductive layer to form a pair of first electrodes and a pair of second electrodes, respectively.

Method of manufacturing non-volatile memory device

In a method for forming a semiconductor device, a device isolation layer is formed in a capacitor region of a silicon substrate, and a bottom electrode and a dielectric layer are formed on the device isolation layer. Insulation sidewalls are formed on both sides of the bottom electrode. A top electrode is formed on the dielectric layer, and simultaneously a gate electrode is formed in a transistor region of the silicon substrate. Source/drain impurity regions are formed in the silicon substrate at both sides of the gate electrode.

Method for fabricating semiconductor device

A method of manufacturing a split gate type non-volatile memory device includes the steps of defining an active region on a semiconductor substrate; forming a pair of first conductive film patterns, each having an electric charge storage layer interposed between the substrate and the first conductive film pattern, on the active region; forming a second conductive film on top of the first conductive film patterns and a remainder of the active region; etchbacking the entire surface of the second conductive film to planarize a top of the second conductive film formed between the first conductive film patterns; forming a photoresist pattern, with an opening corresponding to the active region between the first conductive film patterns, on the second conductive film; and forming a pair of split gates each having one of the first conductive film patterns and a second conductive film pattern formed by patterning the second conductive film using the photoresist pattern as an etching mask.

Growing community of inventors

Seoul, South Korea

Yong Jun Lee