Yonsei University

Korea Institute of Science and Technology

Yong Ju Park

Jong Hyun Ahn

Eun Kyu Kim

Min Pyo Kang

Hyo Jin Kim

Soo Young Kim

Tae Whan Kim

Xiang Chen

Min Woo Choi

Bhupendra Kumar Sharma

Kwang Moo Kim

Sa Rang Bae

The present invention discloses a transient sensor using molybdenum disulfide and a method of manufacturing the same. According to one embodiment of the present invention, the transient sensor using molybdenum disulfide includes a water-soluble substrate; a water-soluble insulating layer deposited on the water-soluble substrate; an electrode layer formed of any one of molybdenum (Mo) and magnesium (Mg) and formed on the water-soluble insulating layer; and a channel layer formed of molybdenum disulfide and formed on the water-soluble insulating layer to be connected to the electrode layer. In addition, when the transient sensor is inserted into living matter, the transient sensor can be dissolved within a critical time in the living matter.

Transient sensor using molybdenum disulfide and method of manufacturing the same

The present disclosure discloses an active matrix organic light-emitting diode display device and a manufacturing method thereof. The method includes forming a sacrificial layer on a carrier layer; forming a flexible substrate on the sacrificial layer; forming a first insulating layer on the flexible substrate; forming at least one transition metal chalcogenide based backplane on the first insulating layer; and forming an opening unit after forming a capping layer on the at least one transition metal chalcogenide based backplane; and forming at least one active matrix organic light-emitting diode unit which is electrically connected to the at least one transition metal chalcogenide based backplane in the opening unit.

Active matrix organic light-emitting diode display device and method of manufacturing the same

A method for aligning quantum dots effectively controls a growth position of the quantum dots for obviating an irregularity of a position of spontaneous formation quantum dots, and thus aligns the quantum dots in one-dimension (1-D) or two-dimension (2-D). A semiconductor device fabricated using the method manufactures a superlattice layer layer for adjusting an internal strain distribution by alternately depositing two semiconductor materials having different lattice constant, and grows spontaneous formation quantum dots on the superlattice layer. As a result, a strained force caused by the superlattice layer influences on the quantum dots so that the quantum dots can be regularly aligned.

Method for aligning quantum dots and semiconductor device fabricated by using the same

Disclosed is a method of forming a quantum dots array. In the method of the present invention, a structure of wire-like quantum dots with good quality is formed in materials having an inconsistency in the lattice constant on a tilted substrate by using the binding property of atomic bonding due to chemical bonding steps of the tilted substrate, and the spacing of the wire-like quantum dots is varied by using the step width of the tilted substrate which is transformed due to a partial pressure of a source gas and the thickness of a buffer layer. The invention allows materials having an inconsistency in the lattice constant to be freely formed in the form of quantum wires with a growing technique only and accordingly to be used as base materials in use for manufacture of novel concept of optoelectronic devices which have not been obtained so far.

Method of formation for quantum dots array using tilted substrate

Growing community of inventors

Seoul, South Korea

Yong Ju Park