Samsung Electro-mechanics Co., Ltd.

Rensselaer Polytechnic Institute

Yong-jo Park

Kyoung-ho Ha

Cheol-soo Sone

Heon-su Jeon

Si-hyun Park

Won-Seok Lee

Jae-hee Cho

Shi-Yun Cho

E Fred Schubert

Ok-hyun Nam

Sung-nam Lee

Jong-kyu Kim

Luo Hong

In-hwan Lee

A light emitting device having a monolithic protection element and a method of fabricating the light emitting device are provided. The light emitting device includes: a light emitter having a cathode and an anode; and the resistive protection element connected to the light emitter in parallel through the cathode and the anode. Here, a resistance Rs of the resistive protection element has a value between a forward resistance Rf and a reverse resistance Rr of a current of the light emitter.

Light emitting device having protection element and method of manufacturing the light emitting device

A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing. The laser output window is shaped such that diffraction of a laser beam caused by the formation of the spacer can be compensated for.

GaN series surface-emitting laser diode having spacer for effective diffusion of holes between P-type electrode and active layer, and method for manufacturing the same

GaN series surface-emitting laser diode having spacer for effective diffusion of holes between p-type electrode and active layer, and method for manufacturing the same

A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.

Nitride semiconductor light emitting device

Growing community of inventors

Kyungki-do, South Korea

Yong-jo Park